Monolithic silicon based SOI high-temperature low-drift pressure sensor

A pressure sensor and low-drift technology, applied in the field of sensing, can solve problems that cannot be solved, cannot be practical, and cannot be practically applied, and achieve the effects of precise design, improved anti-overload capability, and improved yield

Inactive Publication Date: 2006-02-08
SHANGHAI SAISU SENSOR TECH
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  • Abstract
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Problems solved by technology

But in fact it doesn't solve the problem
Parallel or series compensation can achieve zero adjustment at a certain temperature, but it will cause a large additional temperature drift, and the additional temperature drift caused by compensation can generally reach 1 to 2×10 -5 VS / °C, which is equivalent to the additional temperature drift caused by the change of operating temperature of 200°C is more than 50% of the full-scale output, which is not practical
However, the series-parallel compensation has strict requirements on the temperature coefficient of the resistance used for compensation, which cannot be practically applied.

Method used

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  • Monolithic silicon based SOI high-temperature low-drift pressure sensor
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  • Monolithic silicon based SOI high-temperature low-drift pressure sensor

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Embodiment Construction

[0025] The invention adopts SOI material to form the Wheatstone bridge road working at high temperature.

[0026] The four bridge resistances of the Wheatstone bridge in a general diffused silicon piezoresistive pressure sensor use thermal diffusion or ion beam doping to form a P-type resistance region on an N-type (100) silicon single crystal, and the resistances depend on each other. The back-to-back P-N junction is electrically insulated. Since the reverse current of the P-N junction is a function of temperature, when the pressure sensor works at high temperature (>100°C), its reverse current will seriously affect the normal working state of the sensor. Therefore, such sensors cannot be used at high temperatures. The use of silicon insulating medium to isolate bridge resistance is currently a research hotspot in the world for high temperature sensors. In the past two years, people have successfully developed a variety of SOI materials, including polysilicon SOI, SIMOXSOI ...

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Abstract

The invention relates to a single chip silicon SOI high temperature low drift pressure sensor in the field of sensitive sensing technology. Wherein the four voltage-sensitive resistances which form the Wheatstone bridge adopt SOI material; it adopts the interval compensation and the outer compensation technology of partial interval resistance of the SOI resistance network to make the zero point temperature drift below 1X10-6Vs/íµ; it adopts girder-film-island structure to improve the sensibility and linearity of the sensor; it adopts polysilicon with thick boron and the aluminum lead wire covered the lead wire surface to form the interval lead wire of the sensor; it adopts thick boron automatically end technology to make high sensibility high temperature low drift pressure sensor.

Description

technical field [0001] The invention belongs to the field of sensing technology, and in particular relates to a monolithic silicon-based SOI high-temperature and low-drift pressure sensor and a manufacturing method thereof. Background technique [0002] At present, the general monocrystalline silicon pressure sensor adopts P-N junction isolation, and there is P-N junction leakage, which leads to low yield, large output temperature drift, and cannot work above 250°C. The pressure sensor made of polysilicon or other SOI technology, due to the use of dielectric isolation, its operating temperature can reach more than 300 ° C, which can meet the requirements of the operating temperature, but the zero point drift is too large to meet the requirements of practical applications. [0003] Due to technical reasons, there is always a certain offset voltage in micromachined silicon pressure sensors. This offset voltage is typically between 50mV and 100mV. In principle, the offset vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/08G01L13/06H01L49/00
Inventor 沈绍群
Owner SHANGHAI SAISU SENSOR TECH
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