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Tilt incident light scattering silicon wafer surface defect testing instrument

A silicon wafer surface, scattering technology, used in instruments, measuring devices, scientific instruments, etc., can solve the problem that the detection technology is difficult to meet the requirements, and achieve the effects of fast detection speed, small size and high signal-to-noise ratio.

Inactive Publication Date: 2006-03-01
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, a chip with a minimum line width of 0.5 μm requires the resolution of its defect detection equipment to be less than 0.2 μm. With such a high resolution, it is difficult for traditional detection technologies to meet the requirements.

Method used

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  • Tilt incident light scattering silicon wafer surface defect testing instrument

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Embodiment Construction

[0013] see figure 1 . figure 1 It is a schematic structural diagram of the oblique incident light scattering type silicon wafer surface defect detector of the present invention. As can be seen from the figure, the oblique incident light scattering type silicon wafer surface defect detector of the present invention has the following structure:

[0014] In the forward direction of the beam emitted by the laser light source assembly 1, there are in turn a beam expansion system composed of a double concave lens 2 and a plano-convex lens 3, and a double cemented focusing lens 4. The surface of the silicon wafer 6, the silicon wafer 6 is located on the worktable 11; the scattered light collection lens 8 composed of two convex plano-convex lenses opposite to each other collects the scattered light, and the photodetector 9 is placed at the focal point of the collection lens 8, The output terminal of the photodetector 9 is connected to the computer 10 , and an optical trap 7 is provid...

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Abstract

The silicon wafer surface defect detecting instrument includes the following components: laser light source component, beam-expanding system formed from double-concave lens and plano-convex lens, double-balsaming focusing lens, plane reflector, working table, photoelectric detector and computer. Said invention also provides its working principle.

Description

technical field [0001] The invention relates to silicon wafers, and utilizes the Mie theory of light scattering for real-time detection of defects on the surface of silicon wafers in the manufacture of integrated circuits, in particular to an oblique incident light scattering type surface defect detector for silicon wafers. Background technique [0002] Due to the continuous increase in the size of silicon wafers and the dramatic reduction in the feature size of integrated circuit (IC) patterns, the chip structure is more complicated, and the impact of defect density on the yield becomes more and more prominent. Each step in chip production can introduce defects and contamination, either mechanically or artificially. If such problems are not discovered and solved in time, the yield of the production line will be greatly reduced. [0003] Conventional silicon wafer defect detection is completed by optical microscope or optical imaging technology, which not only has a slow de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/956H01L21/66
Inventor 程兆谷高海军覃兆宇张志平黄惠杰钱红斌
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI