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Transistor with carbon nanotube channel and method of manufacturing the same

A carbon nanotube and transistor technology, which is applied in the field of transistors with carbon nanotube channels and its manufacturing, can solve the problems of reducing the performance of semiconductor devices, increasing leakage current and the like

Inactive Publication Date: 2006-05-03
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the leakage current may increase and the performance of the semiconductor device may be degraded

Method used

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  • Transistor with carbon nanotube channel and method of manufacturing the same
  • Transistor with carbon nanotube channel and method of manufacturing the same
  • Transistor with carbon nanotube channel and method of manufacturing the same

Examples

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no. 1 example

[0041] image 3 is a cross-sectional view of a carbon nanotube transistor according to a first embodiment of the present invention.

[0042] refer to image 3 , a carbon nanotube transistor (hereinafter referred to as a first transistor) includes a substrate 40 , and a first insulating layer 42 is formed on the substrate 40 . Preferably, the first insulating layer 42 is formed of a material having a lower dielectric constant than that of the second insulating layer 50 (to be described later). The first insulating layer 42 can be made of SiO 2 form. Also, a first metal layer 46 , a second metal layer 48 and a carbon nanotube channel 44 are formed on the first insulating layer 42 . The first and second metal layers 46 and 48 serve as source and drain, respectively. A carbon nanotube channel 44 is formed on the first insulating layer 42 between and in contact with the first and second metal layers 46 and 48 . Also, the first transistor includes a second insulating layer 50 ...

no. 2 example

[0046] image 3 and 4 Like reference numerals denote like elements.

[0047] Figure 4 is a cross-sectional view of a carbon nanotube transistor according to a second embodiment of the present invention.

[0048] refer to Figure 4 , the carbon nanotube transistor (hereinafter referred to as the second transistor) includes first and second metal layers 46 and 48 and a carbon nanotube channel 44 on the first insulating layer 42 . The first insulating layer 42 may be formed of a silicon oxide layer or a nitride layer. The first and second metal layers 46 and 48 and the carbon nanotube channel 44 are covered with a second insulating layer 70 . The second insulating layer 70 may be formed of a dielectric layer having a dielectric constant higher than that of the first insulating layer 42 (for example, an oxide layer), or may be formed of a dielectric layer having a dielectric constant equal to or lower than that of the first insulating layer 42. A dielectric layer (eg, a sil...

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Abstract

The invention discloses a transistor with a carbon nanotube channel and a method for manufacturing it. At least two gate electrodes are formed on the gate insulating layer formed on the carbon nanotube channel and insulated from each other. Thus, minority carriers are prevented from flowing into the carbon nanotube channels. Therefore, leakage current generated when both majority carriers and minority carriers flow into the carbon nanotube channel can be prevented. Therefore, degradation of transistor characteristics due to leakage current can be prevented.

Description

technical field [0001] The invention relates to a semiconductor device with a carbon nanotube channel and a manufacturing method thereof, more specifically, to a transistor with a carbon nanotube channel and a manufacturing method thereof. Background technique [0002] Carbon nanotubes have a diameter 10,000 times smaller than that of a human hair, but are stronger than steel, have the properties of a semiconductor and a metal, and have better properties than silicon. Also, since carbon nanotubes have mobility seventy times higher than that of silicon at room temperature, carbon nanotubes can overcome disadvantages of silicon materials, for example, high noise levels of silicon materials. [0003] Due to these characteristics, carbon nanotubes have been widely used in semiconductor devices, flat panel displays, batteries, super-strong fibers, biosensors, TV cathode ray tubes (CRTs), and the like. Carbon nanotubes are also used as nanotweezers, which can pinch and place nano...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336
CPCB82Y10/00H10K19/10H10K85/221H10K85/615H10K10/482H10K10/464H10K10/466H01L21/823462
Inventor 朴玩浚郑炳昊裵恩珠汉斯·科西娜马迪·福尔法思
Owner SAMSUNG ELECTRONICS CO LTD