Epoxy resin composition for semiconductor encapsulation and semiconductor device
An epoxy resin and semiconductor technology, which is applied to semiconductor devices, semiconductor/solid-state device components, and electric solid-state devices, etc., can solve the problems of epoxy resin compositions with high resistivity, high insulation, and insufficient electrical properties. Achieve the effect of avoiding short circuit or leakage, preventing re-agglomeration, and avoiding deformation of metal wires
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Examples
Embodiment 1
[0026] The compounding components in Table 1 were mixed at normal temperature with a mixer, melted and kneaded with a heating roll at 80 to 100° C., and the kneaded product was cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following evaluation method. The results are shown in Table 2.
[0027] Biphenyl type epoxy resin; "YX4000"
Melting point 105°C,
Epoxy resin equivalent 195g / eq, oily shell ring
Manufactured by Oxygen Co., Ltd.
8.5 parts by weight
Phenolic resin for phenol paint; softening point 65°C,
Hydroxyl equivalent 104g / eq
4.5 parts by weight
Spherical fused silica; average particle size 22μm,
Maximum particle size 75μm
84.4 parts by weight
Carbon Precursor A; "CB-3-600",
H / C weight % ratio = 3 / 96, average particle diameter
3μm, maximum particle size 20μm, resistivity value 1
×10 6 Ω·cm, manufactured by Mitsui Mi...
Embodiment 2~ Embodiment 4
[0044] In addition to using 1.8 parts by weight (Example 2), 3.0 parts by weight (Example 3), and 0.5 parts by weight (Example 4) instead of 1.0 parts by weight of the carbon precursor A, the same method as in Example 1 was used. method to proceed. In addition, the blending amount of the spherical fused silica was adjusted according to the change in the blending amount of the carbon precursor A.
Embodiment 5
[0046] It carried out similarly to Example 1 except having used the following carbon precursor B instead of carbon precursor A. The results are shown in Table 2.
[0047] The carbon precursor B; the spherical phenol resin with an average particle diameter of 15 μm was dried, and fired at 650° C. for 4 hours to obtain the carbon precursor B with a yield of 99%. The physical properties of the obtained carbon precursor B were hydrogen / carbon weight % ratio=2 / 97, the average particle size was 10 μm, the maximum particle size was 30 μm, and the resistivity value was 1×10 4 Ω·cm.
PUM
Property | Measurement | Unit |
---|---|---|
Melting point | aaaaa | aaaaa |
Softening point | aaaaa | aaaaa |
Hydroxyl equivalent | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com