Chemical-mechanical grinding method

A chemical-mechanical and grinding method technology, applied in grinding devices, grinding machine tools, grinding tools, etc., can solve the problems of slow grinding speed, affecting process margin, not mentioning the situation of high-selectivity grinding slurry CMP process, etc. Increased grinding speed, improved process latitude and defect control, reduced effects of micro-scratch damage

Active Publication Date: 2006-08-09
UNITED MICROELECTRONICS CORP
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  • Abstract
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  • Claims
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Problems solved by technology

However, this prior art does not mention the CMP process of the high-selectivity polishing slurry, nor how to solve the problem that the high-selectivity polishing slurry affects the process margin due to the slow polishing speed of the shallow trench isolation process, etc. question

Method used

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Embodiment Construction

[0032] Please refer to Figure 5 to Figure 9 , Figure 5 to Figure 9 It is a process schematic diagram of the method for improving the polishing effect of a highly selective polishing slurry CMP process of the present invention. In this embodiment, the CMP process is applied to a shallow trench isolation process to remove the silicon dioxide layer outside the trench. Such as Figure 5 As shown, a first polishing pad 50 and a wafer carrier 54 are firstly provided, wherein the first polishing pad 50 is disposed on a first polishing platform (platen) 52 , and the wafer carrier 54 is used to fix a wafer 56 . The chip 56 is preferably a semiconductor chip on which integrated circuit components such as semiconductors are fabricated, and the chip 56 is fixed on the chip carrier 54 in a detachable manner.

[0033] Then if Image 6 As shown, a wafer carrier downforce F is provided to the wafer carrier 54 1 , so that the wafer 56 is in contact with the first polishing pad 50 dispose...

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Abstract

The invention discloses method for improving grinding effect of chemically machinery grinding technique in use of high selective grinding pulp. After a prearranged time of carrying out a chemically machinery grinding procedure, deionized water is provided on grinding pad to continue chemically machinery grinding procedure in order to raise grinding speed and effect.

Description

technical field [0001] The present invention relates to a kind of chemical-mechanical polishing method, is used for improving the chemical-mechanical polishing process (chemical-mechanical polishing, CMP) effect method of highly selective grinding slurry (highselective slurry, HSS), particularly relates to a kind of adding deionized Water is used in the CMP process to improve the grinding effect of HSSCMP. Background technique [0002] In the semiconductor process, chemical mechanical polishing (CMP) technology is currently the most commonly used and also the most important planarization technology. [0003] Generally speaking, CMP technology utilizes appropriate grinding slurry and mechanical grinding to uniformly remove a target thin film layer (target thin film) with an irregular surface on a semiconductor chip, so that the semiconductor chip can be processed after CMP. It has a regular and planar surface. Among them, the grinding slurry is generally composed of chemica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B1/00B24B37/00B24B37/11B24B37/27
Inventor 朱辛堃蔡腾群杨凯钧李志岳
Owner UNITED MICROELECTRONICS CORP
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