Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor interconnect structure and NOR type quickflashing memory and method of manufacture

A manufacturing method and interconnection technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem that the area of ​​NOR-type flash memory cannot be further reduced, and increase NOR-type flash memory Body size and other issues, to achieve the effect of reducing the memory area, reducing the memory area, and reducing the memory area

Inactive Publication Date: 2006-10-04
MACRONIX INT CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, because the above-mentioned structure uses many contact windows, the area of ​​the NOR flash memory cannot be further reduced, and the current trend of miniaturization of semiconductors goes against the trend.
In addition, the external wires will increase the size of the NOR flash memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor interconnect structure and NOR type quickflashing memory and method of manufacture
  • Semiconductor interconnect structure and NOR type quickflashing memory and method of manufacture
  • Semiconductor interconnect structure and NOR type quickflashing memory and method of manufacture

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0054] see image 3 Shown is a schematic cross-sectional view of a semiconductor interconnection according to the first embodiment of the present invention. see image 3 , the semiconductor interconnection includes a substrate 300 , an insulating layer 304 and a conductive layer 306 . Wherein, a trench 302 has been formed in the substrate 300, and an insulating layer 304 is disposed in the trench 302, and its material is, for example, silicon oxide. Furthermore, the conductive layer 306 is disposed in the insulating layer 304 and covered by the insulating layer 304 , and its material is, for example, doped polysilicon.

[0055] Due to the semiconductor interconnection in the first embodiment, the conductive layer 306 is disposed in the insulating layer 304, which can effectively save space and reduce the size of the semiconductor device.

no. 2 example

[0057] see Figure 4A ~ Figure 4C Shown is a cross-sectional view of the manufacturing process of a semiconductor interconnection line according to the second embodiment of the present invention. First, see Figure 4A Firstly, a substrate 400 is provided, and a trench 406 has been formed in the substrate 400. The formation method is, for example, firstly forming a patterned mask layer 404 on the substrate 400, and then performing an etching process to form it. Wherein, the material of the patterned mask layer 404 is, for example, silicon nitride. In addition, before forming the patterned mask layer 404 , the pad oxide layer 402 may be formed on the substrate 400 to increase the adhesion of the patterned mask layer 404 . The material of the pad oxide layer 402 is, for example, silicon oxide, and the forming method is, for example, thermal oxidation.

[0058] Next, see Figure 4B A liner oxide layer 408 is formed on the surface of the trench 406, and its material is, for exa...

no. 3 example

[0063] see Figure 5A Shown is a top view of a NOR flash memory according to the third embodiment of the present invention, Figure 5B yes Figure 5A The schematic cross-sectional view of the B-B' line of , and Figure 5C yes Figure 5A The schematic cross-section of the line C-C'.

[0064] Please also see Figure 5A to Figure 5C The NOR flash memory provided in this embodiment includes a substrate 500, several control gates 502, several trenches 504, several source regions 506, several drain regions 508, several isolation structures 510, A plurality of conductive blocks 514 , a plurality of floating gates 516 , a plurality of tunnel oxide layers 518 and a dielectric layer 520 .

[0065] Wherein, the control gates 502 are arranged on the substrate 500 along the X direction, and the trenches 504 are arranged on the surface of the substrate 500 along the Y direction. Moreover, the source region 506 is located in the substrate 500 and the trench 504 on one side of the contr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a semiconductor inner connecting line structure and NOR type quick flashing memory body and its making method. The semiconductor inner connecting line structure comprises a base, an insulating layer and a conductive layer. It forms a channel on the base; the insulating layer is positioned on the channel. The conductive layer is positioned in the insulating layer and not touching the channel surface, which is covered by the insulating layer.

Description

technical field [0001] The present invention relates to a semiconductor interconnection structure and a NOR-type flash memory (NOR-type flash memory), and in particular to a semiconductor interconnection structure and a NOR-type flash memory capable of reducing pitch. Background technique [0002] figure 1 is a top view of a known NOR flash memory, and figure 2 yes figure 1 The schematic sectional view of the line II-II'. [0003] Please also see figure 1 and figure 2 In a substrate 100, there are diffusion regions 102 and isolation regions 104 arranged alternately in the Y direction, and there are control gates 106 arranged at intervals in the X direction on the substrate 100. The floating gate (not shown in the figure) and the tunnel oxide layer (not shown in the figure) of the memory cell are located in the region 110 where each diffusion region 102 overlaps the control gate 106 . In addition, the diffusion region 102 on one side of the control gate 106 can be use...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/52H01L23/532H01L21/768H01L27/10
Inventor 何之浩吴俊沛
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com