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Semiconductor device and method of manufacturing the same

A technology of semiconductors and conductive components, which is applied in the direction of semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., which can solve problems such as deterioration of high-frequency characteristics, deterioration of high-frequency characteristics of the semiconductor device 105, large parasitic inductance, etc., and achieve reduction Effects of parasitic inductance, improvement of high-frequency characteristics, and improvement of yield

Active Publication Date: 2006-10-04
SANYO ELECTRIC CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, for example, if a thin metal wire 103 with a diameter of 25 μm and a length of 1 mm is used, a large parasitic inductance will be generated, which will deteriorate the high-frequency characteristics of the semiconductor device 105.
In particular, in the case of the semiconductor device 105 operating at a high frequency of 1 GHz or higher, the high frequency characteristics are greatly deteriorated due to parasitic inductance.

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
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no. 1 approach

[0072] In this method, refer to Figure 1 to Figure 5 A structure of a semiconductor device having a through-electrode penetrating a semiconductor substrate will be described.

[0073] refer to figure 1 The configuration of a circuit device 10A including a semiconductor device 20A of the present invention will be described. figure 1 (A) is a perspective view of the circuit device 10A, figure 1 (B) is a cross-sectional view of the semiconductor device 20A.

[0074] refer to figure 1 (A) Here, the semiconductor device 20A is provided in the lead frame type circuit device 10A. Specifically, the semiconductor device 20A is fixed on the upper surface of the land 12 arranged in the center. In addition, the two lead wires 11D and 11B are extended to the outside from the end of the land 12 . In addition, a lead wire 11A and a lead wire 11C are provided close to the land surface 12 . The land 12, the lead wire 11A, etc. are an example of a conductive member. As a conductive...

no. 2 approach

[0116] Second, refer to Figure 6 ~ Figure 8 illustrate Figure 4 (A) The manufacturing method of the semiconductor device 20A of the structure shown. First, refer to Image 6 A method of forming the active region 21 composed of bipolar transistors will be described.

[0117] refer to Image 6 (A), first, on the surface of the P-type semiconductor substrate 42 with a thickness of about 600 μm, N + type buried layer 43 . Further, N is formed on the P-type semiconductor substrate 42 - Type epitaxial layer 31. N - The thickness of the epitaxial layer 31 is about 1.5 μm. Then, by oxidizing the entire face, the N - An oxide film 32 with a thickness of about 0.05 μm is formed on the epitaxial layer 31 .

[0118] refer to Image 6 (B) Next, a groove 33 is formed surrounding an active region to be formed, and the inside of the groove 33 is filled with an oxide film. Here, the oxide film 32 and the N - Type epitaxial layer 31. Oxide film 32 is removed using CF 4 gas-like...

no. 3 approach

[0136] In this embodiment, refer to Figure 9 illustrate Figure 4 (C) The manufacturing method of the semiconductor device 20B of the structure shown. The manufacturing method of this embodiment is basically the same as that of the above-mentioned second embodiment, except that the side wall insulating film is not formed on the inner wall of the through-hole 24B.

[0137] Specifically, refer to Figure 9 (A), first, the active region 21 composed of, for example, a bipolar transistor is formed. Furthermore, the active region 21 is separated from the elements by forming the groove 33 surrounding the active region 21 . In addition to the groove 33, the isolation of the active region 21 may also be performed using a PN junction isolation and a LOCOS oxide film. In addition, electrodes connected to the respective regions constituting the active region 21 are formed on the surface of the oxide film 32 . Here, the emitter pad electrode 23E and the collector pad electrode 23C ar...

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Abstract

This invention relates to a semiconductor device and the method to fabricate the same. Said semiconductor device(20A) in which emitter pad electrodes(23E) connected to an active region(21), collector(23C) and base pad electrodes(23B) are formed on a surface of a semiconductor substrate(25). Furthermore, on a back surface of the semiconductor substrate(25), a backside electrode(26) is formed. Moreover, the emitter pad electrodes (23E)connected to a grounding potential are connected to the backside electrode(26) through feedthrough electrodes(24A) penetrating the semiconductor substrate(25) in a thickness direction.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device having a through-electrode penetrating a semiconductor substrate and a manufacturing method thereof. Background technique [0002] refer to Figure 13 The perspective view of FIG. 2 illustrates a circuit device 100 in which a conventional semiconductor device 105 is provided (for example, refer to the following Patent Document 1). [0003] The circuit device 100 has a structure in which a semiconductor device 105 is mounted on the surface of a land 112 arranged in the center. The lead wire 101B and the lead wire 101D are led out from both ends of the land surface 112 . Furthermore, lead wires 101A and 101C are provided on both sides of the land surface 112 . In addition, the entire circuit device 100 is covered with a sealing resin 104 . [0004] The semiconductor device 105 is a bipolar transistor here, and an ...

Claims

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Application Information

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IPC IPC(8): H01L29/423H01L23/482H01L21/28
CPCH01L2924/01078H01L2924/01079H01L2924/3011H01L2224/48227H01L2924/30107H01L2224/48247H01L2924/13091H01L24/73H01L2224/48091H01L2224/48465H01L2924/00014H01L2924/1305H01L2924/1306H01L2924/351H01L2924/00H01L2224/45099
Inventor 久保博稔白旗由香利松本成仁山室正伦龟山工次郎梅本光雄
Owner SANYO ELECTRIC CO LTD
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