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Positive photoresist composition and method of forming resist pattern

A positive resist and resist pattern technology, which is applied in the photoengraving process of the pattern surface, the photosensitive material for optical mechanical equipment, optics, etc., can solve the problems of increasing development defects and development residues.

Active Publication Date: 2006-10-25
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this increased protection ratio tends to increase the occurrence of development defects such as development residue
The appearance of developing defects is unfavorable and it can become a significant problem in the manufacture of semiconductor components

Method used

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  • Positive photoresist composition and method of forming resist pattern
  • Positive photoresist composition and method of forming resist pattern
  • Positive photoresist composition and method of forming resist pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0034] [Positive resist composition embodiment 1 (positive resist composition of the first aspect of the present invention)]

[0035] The positive resist composition of the first aspect of the present invention comprises a resin component (A) containing an acid-dissociable, dissolution-inhibiting group and exhibiting enhanced alkali solubility under the action of an acid (hereinafter referred to as component (A) )) and an acid generator component (B) that generates acid by exposure (hereinafter referred to as component (B)).

[0036] In component (A), the action of the acid generated from component (B) causes the dissociation of the acid-dissociable, dissolution-inhibiting group, thereby causing the entirety of component (A) to change from an alkali-insoluble state to an alkali-soluble state .

[0037] As a result, when the resist is exposed through a mask pattern during resist pattern formation, or alternatively exposed and then post-exposure baked, the exposed portions of t...

Embodiment approach 2

[0115] [Positive resist composition embodiment 2 (positive resist composition of the second aspect of the present invention)]

[0116] Embodiment 2 of the positive resist composition of the present invention comprises: a resin component (A) (hereinafter referred to as component ( A), in the same manner as Embodiment 1 of the positive resist composition), the generator component (B) that generates acid by exposure (hereinafter referred to as component (B), implemented with the positive resist composition Scheme 1 in the same manner), and compound (C) (hereinafter referred to as component (C)), said compound (C) contains at least one acid dissociable, dissolution inhibiting group, and the compound Under the action of the acid generated in component (B), the dissolution inhibiting group dissociates to generate an organic carboxylic acid.

[0117] As for component (A), the action of the acid generated from component (B) causes the dissociation of the acid-dissociable, dissolution...

Embodiment 1

[0198] First, component (A) is prepared. That is, using a common method, in the presence of an acid catalyst, a copolymer (molar ratio: 80 : 20, weight average molecular weight (Mw): 8,000, polydispersity (Mw / Mn): 1.78) reacted with ethyl vinyl ether, thereby forming resin X (Mw=10,000, Mw / Mn=1.7), wherein A resin having protected some of the hydroxyl groups of the copolymer with 1-ethoxyethyl groups was used as component (A).

[0199] when by 1 When this resin X was analyzed by H-NMR, the number of 1-ethoxyethyl groups was 18% with respect to all the hydroxyl groups in p-hydroxystyrene and adamantanol. This shows that the protection ratio of the hydroxyl group is 18 mol%.

[0200] In a mixed solvent of 500 parts by weight of PGMEA and EL (wherein the weight ratio of PGMEA:EL is 6:4), dissolve 100 parts by weight of component (A), 5.0 parts by weight of bis(cyclohexylsulfonyl)diazo Methane, 6.0 parts by weight of bis(isopropylsulfonyl)diazomethane and 2.0 parts by weight o...

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Abstract

A positive resist composition comprising (A) a resin ingredient which has acid-dissociable dissolution-inhibitive groups and comes to have enhanced alkali solubility by the action of an acid and (B) an acid generator ingredient which generates an acid upon exposure to light, wherein the resin ingredient (A) is a copolymer (A1) which comprises first structural units (a1) derived from hydroxystyrene and second structural units (a2) derived from a (meth)acrylic ester having an alcoholic hydroxy group and in which part of the hydroxy groups of the structural units (a1) and of the alcoholic hydroxy groups of the structural units (a2) have been protected by the acid-dissociable dissolution-inhibitive groups. The acid generator ingredient (B) comprises a diazomethane type acid generator and an onium salt type acid generator, or the composition further contains a compound which has at least one acid-dissociable dissolution-inhibitive group and can generate an organic carboxylic acid by the action of the acid generated from the ingredient (B).

Description

technical field [0001] The present invention relates to a positive type resist composition and a method for forming a resist pattern. The present invention claims Japanese Patent Application No. 2003-326146 filed on September 18, 2003 and Japanese Patent Application No. 2003-331606 filed on September 24, 2003 and Japanese Patent Application No. 2003-331606 filed on April 14, 2004. Priority of .2004-119494, the contents of which are hereby incorporated by reference. Background technique [0002] In recent years, developments in photolithography have led to rapid progress in miniaturization in the production of semiconductor elements and liquid crystal display elements. Typically, these miniaturization techniques involve shortening of the exposure source wavelength. Until recently, ultraviolet rays such as g-line and i-line have been used as exposure sources, however, recently KrF excimer lasers (248 nm) have been introduced and even ArF excimer lasers (193 nm) are now being...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/004G03F7/033H01L21/027
Inventor 山崎晃义谷和夫本池直人前盛论吉泽佐智子
Owner TOKYO OHKA KOGYO CO LTD
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