Semiconductor device, liquid crystal panel, electronic device and method for manufacturing same
A semiconductor and device technology, applied in the field of manufacturing semiconductor devices, can solve problems such as unstable initial characteristic circuit operation and deviation of low-temperature thin-film transistor characteristics
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no. 1 example
[0041] The semiconductor device according to the first embodiment is a driver circuit for driving a liquid crystal display panel, including a P-channel transistor. Hereinafter, the driver circuit is referred to as a scanning circuit 1 .
[0042] like figure 1 As shown, the scanning circuit 1 is formed on a glass substrate 2 (see image 3 )superior. The scanning circuit 1 has a plurality of shift registers (SR1, SR2, SR3, SR4, . . . ) connected in series. The start pulse ST is input to the shift register SR1 at the first stage, and the output signal of the previous shift register is input to the shift registers of the second and subsequent stages.
[0043] Two of the three clock signals C1 to C3 are input to each shift register. In other words, when k is an integer greater than or equal to 0, the clock signals C3 and C1 are input to the shift register of the (3k+1)th stage, and the clock signals C1 and C2 are input to the shift register of the (3k+2)th stage register, and ...
no. 2 example
[0094] Next, a second embodiment of the present invention will be explained.
[0095] like Figure 7 As shown, in the semiconductor device according to the second embodiment, the channel region 6 and the gate electrode 9 are longer in the transistor T6 than in the transistor T5. For example, assume that the lengths of the channel region 6 and the gate electrode 9 in the transistor T6 are 3 μm, and the lengths of the channel region 6 and the gate electrode 9 in the transistor T5 are 1 μm. It is assumed that the doping concentrations of the channel regions 6 in the transistors T5 and T6 are equal. With this structure, the absolute value of the initial threshold of transistor T6 is set to the upper limit within the acceptable range of the desired threshold, and the absolute value of the initial threshold of transistor T5 is set to the lower limit of the acceptable range of the desired threshold. Therefore, also in the semiconductor device according to the second embodiment, the...
no. 3 example
[0099] Next, a semiconductor device according to a third embodiment of the present invention will be explained.
[0100] like Figure 8 As shown, the semiconductor device according to the third embodiment has silicon nitride film 14 between transistor T6 and glass substrate 2 . Silicon nitride film 14 is provided between silicon oxide film 3 and glass substrate 2 only in the region where transistor T6 is formed.
[0101] Also, according to the third embodiment, the crystal grain of the polysilicon film 4 forming the transistor T6 is smaller than the crystal grain of the polysilicon film 4 of the transistor T5. With this structure, the absolute value of the initial threshold of transistor T6 is set to the upper limit within the acceptable range of the desired threshold, and the absolute value of the initial threshold of transistor T5 is set to the lower limit of the acceptable range of the desired threshold. Therefore, also in the semiconductor device according to the third e...
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Abstract
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