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Method for making low-temperature polycrystal silicon film transistor with low doped drain electrode structure

A low-temperature polysilicon, thin film transistor technology, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increased processing cost and processing time, LDD structure shift, etc., to save processing cost and processing time, Improve the effect of LDD structure offset situation

Active Publication Date: 2007-01-10
AU OPTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] From the description of the above prior art, it can be seen that in the prior art, the method of manufacturing a low-temperature polysilicon thin film transistor with an LDD structure needs to use an additional mask to make the pattern of the photoresist pattern layer 16. In its photoetching process (photo etching process) In the case where the LDD structure is easily shifted due to alignment errors during exposure
In addition, due to the need for an additional mask, the existing technology is limited by the increase in processing cost and processing time caused by an additional photolithography process.
Therefore, the disadvantage of the prior art is that additional mask processing must be added

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  • Method for making low-temperature polycrystal silicon film transistor with low doped drain electrode structure
  • Method for making low-temperature polycrystal silicon film transistor with low doped drain electrode structure
  • Method for making low-temperature polycrystal silicon film transistor with low doped drain electrode structure

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Embodiment Construction

[0048] Please refer to Figure 2A to Figure 2H It is a schematic diagram of the manufacturing method of the low-temperature polysilicon thin film transistor with LDD structure of the present invention. First please refer to Figure 2A , a transparent insulating substrate 30 is first provided, a buffer layer 31 is formed on the substrate 30, and then, an amorphous silicon precursor (α-Siprecursor) is deposited on the buffer layer 31, and excimer laser tempering technology is used to (ELA) crystallizes amorphous silicon (α-Si) into polycrystalline Si (polycrystalline Si) at a temperature lower than 500 degrees Celsius, thereby forming a polycrystalline silicon layer 320 on the buffer layer 31 . Afterwards, using a plurality of photoresist 48 having a predetermined pattern (such as Figure 2A ) and etching methods, the polysilicon layer 320 is formed into a plurality of polysilicon islands 32, such as Figure 2B shown.

[0049] Please continue to refer to Figure 2C After th...

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Abstract

The method includes steps: (1) forming an island of polysilicon on a base plate; (2) forming a dielectric layer, a metal layer and a cover layer in sequence to cover the island of polysilicon; (3) forming a photoresistive pattern layer on the cover layer, and removing partial cover layer and metal layer uncovered by the photoresistive pattern layer, and exposing partial metal layer at prearranged distance on same side of reserved cover layer; (4) using metal layer as optical mask to carry out doping procedure of ion in high dose in order to form a heavily doped zone on partial island of polysilicon uncovered by metal layer; (5) removing partial metal layer uncovered by the reserved cover layer; (6) using metal layer as optical mask to carry out doping procedure of ion in low dose to form a light doped zone on partial island of polysilicon uncovered by metal layer.

Description

technical field [0001] The invention relates to a method for manufacturing a low temperature polysilicon thin film transistor (LTPS TFT), in particular to a method for manufacturing a low temperature polysilicon thin film transistor with a lightly doped drain (lowdoped drain, LDD) structure. Background technique [0002] Thin film transistor-liquid crystal display (TFT-LCD) has become the main product in the display market. With the rapid development of liquid crystal display products, the industry competition among LCD panel manufacturers is increasing day by day. How to improve the performance and reliability of thin film transistors and reduce manufacturing costs are important development goals. Improving the performance of transistors needs to start from the structure or materials. Since the leakage current phenomenon of transistors is the main cause of power consumption, the related silicon insulating layer, high dielectric gate and other technologies to reduce leakage ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/786
Inventor 郑逸圣
Owner AU OPTRONICS CORP