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Acoustic boundary wave device

A technology of interface wave and sound wave, applied in the direction of electrical components, impedance network, etc., can solve the problems of increasing the cost of surface acoustic wave devices, increasing the size of surface acoustic wave devices, etc.

Active Publication Date: 2007-01-10
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the use of the housing having the above-mentioned cavity portion, an increase in the cost of the surface acoustic wave device is unavoidable
In addition, since the size of the housing is much larger than the size of the surface acoustic wave element, the size of the surface acoustic wave device must be increased

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0135] Figures 2 to 6 are shown, respectively, when using electrode materials with different densities in SiO 2 Solid-state layer and LiNbO with Euler angles (0°, 90°, 0°) 3 In the case of forming electrodes between substrates, the electrode thickness H / λ (where H represents the thickness, and λ represents the wavelength of the SH-type boundary acoustic wave) is related to the sound velocity, propagation loss α, and electromechanical coefficient k of the boundary acoustic wave. 2 (%), frequency temperature coefficient TCF (ppm / ℃) and power flow angle (PFA) relationship.

[0136] By "A method for estimating optimal cuts and propagation directions for excitation and propagation directions for excitation of piezoelectric surface waves" (J.J.Campbell and W.R.Jones, IEEE Trans.Sonics and Ultrason., Vol.SU-15(1968), P209-217) Calculated using the method disclosed in Figures 2 to 6 The results shown in .

[0137] In the case of free boundaries, the sound velocity and propagatio...

example 2

[0159] According to the results obtained in Example 1, in LiNbO with Euler angles (0°, θ, 0°) 3 An Au electrode with a thickness of 0.05λ is formed on the substrate, and a SiO electrode covering the Au electrode is formed 2 membrane. In this structure, the measured LiNbO 3 The Euler angle θ of the substrate and the sound velocity V and electromechanical coefficient k of the SH-type boundary acoustic wave and Stoneley wave 2 , Propagation loss α, frequency temperature coefficient TCF and power flow angle (PFA) relationship. Figures 9 to 11 Indicates Euler angle θ and sound velocity, electromechanical coefficient k 2 and frequency temperature coefficient TCF relationship. In the whole region of θ=0°-180°, the transmission loss α is 0dB / λ, and the power flow angle (PFA) is 0°.

[0160] exist Figures 9 to 11 Among them, U2 represents the SH-type boundary acoustic wave, and U3 represents the Stoneley wave that causes spurious signals.

[0161] as from Figure 10 It can be...

example 3

[0175] Below, each LiNbO with Euler angles (φ, 105°, 0°) and Euler angles (0°, 105°, ψ) 3 An Au electrode with a thickness of 0.06λ is formed on the substrate, and a SiO electrode covering the Au electrode is formed 2 film, forming a boundary acoustic wave device. In this case, measuring LiNbO 3 The Euler angles θ and ψ of the substrate and the sound velocity V and electromechanical coefficient k of the SH-type boundary acoustic wave (U2) and Stoneley wave (U3) 2 , Propagation loss α, frequency temperature coefficient TCF and power flow angle (PFA) relationship. Figures 14 to 17 Indicates that when using LiNbO with Euler angles (φ, 105°, 0°) 3 The results obtained when the substrate, Figures 18 to 21 Indicates that when using LiNbO with Euler angles (0°, 105°, ψ) 3 The results obtained when the substrate. In the entire region where φ is 0°-90°, the propagation loss α is 0dB / λ.

[0176] as from Figure 16 Obviously, in the range of φ is 0°-31°, the electromechanical c...

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PUM

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Abstract

A small-sized, high-performance boundary acoustic wave device using boundary acoustic waves. The device is obtained by sharpening the filter bands and fabricating resonators and filters of bands with different specific bandwidths on a single substrate. In the boundary acoustic wave device (1), a solid layer (5) is formed on a single crystal substrate (4), and an electrode is provided between the single crystal substrate (4) and the solid layer (5). The device (1) comprises boundary acoustic wave elements (2, 3) formed using single crystal substrates (4) having the same cut angle. The propagation direction of the boundary acoustic wave element (2) is different from the propagation direction of the boundary acoustic wave element (3).

Description

technical field [0001] The present invention relates to a boundary acoustic wave device using boundary acoustic waves, and more particularly, to a boundary acoustic wave device having a structure in which an electrode is provided at a boundary between a single crystal substrate and a solid layer. Background technique [0002] So far, various surface acoustic wave devices have been used for RF and IF filters in mobile phones, resonators in VCOs, VIF filters in televisions, and the like. The surface acoustic wave device uses a surface acoustic wave propagating along the surface of a medium, such as a Rayleigh wave or a first leaky wave. [0003] However, due to propagation along the surface of the medium, SAW is sensitive to changes in the surface conditions of the medium. Thus, in order to protect the surface of the medium along which the surface acoustic wave propagates, it is necessary to vacuum-seal the surface acoustic wave element in a housing having a cavity portion so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25H03H9/145H03H9/02
CPCH03H9/14538H03H9/6483H03H9/02559H03H9/568H03H9/0222H03H9/145H03H9/25
Inventor 神藤始
Owner MURATA MFG CO LTD
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