Organic electroluminescence device and method for fabricating the same
A light-emitting display, organic technology, applied in the field of OLED, can solve the problems of increased product cost, complex process, and prolonged overall process operation time.
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Embodiment 1
[0038] Figures 2A to 2H is a cross-sectional view illustrating an organic light emitting display device (OLED) having a bottom gate type complementary metal oxide semiconductor thin film transistor (CMOS TFT) and a method of manufacturing the same according to an exemplary embodiment of the present invention.
[0039] refer to Figures 2A to 2H , an OLED having a bottom gate type CMOSTFT according to an exemplary embodiment of the present invention includes a substrate 200 having a first TFT region A, a second TFT region B, an opening region C, and an interconnection region D. The substrate 200 may be a transparent substrate formed of glass, plastic, or quartz.
[0040] refer to Figure 2A , the first gate electrode 210, the second gate electrode 215, and the metal interconnection 220 are formed in the first and second TFT regions A and B of the substrate 200 and patterned using a first mask (not shown). The first and second gate electrodes 210 and 215 may be formed of a m...
Embodiment 2
[0069] Figures 3A to 3I is a cross-sectional view showing an OLED having a top-gate type CMOSTFT and a manufacturing method thereof according to another embodiment of the present invention.
[0070] refer to Figure 3A , An OLED having a top-gate CMOS TFT according to another embodiment of the present invention includes a substrate 300 having a first TFT region A, a second TFT region B, an opening region C and an interconnection region D. The substrate 300 may be a transparent substrate formed of glass, plastic, or quartz.
[0071] A metal interconnection 310 is formed in the interconnection region D of the substrate 300 using a first mask (not shown). Metal interconnection 310 may be formed of one material selected from the group containing Mo, W, Al, and alloys thereof. Metal interconnection 310 may be formed by a sputtering method or a vacuum deposition method. Generally, metal interconnection 310 may be formed by depositing material using a sputtering method and then ...
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