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Through type photoelectric diode of low parasitic capacitance structure

A photodiode and through-type technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve problems such as packaging of difficult automatic wiring equipment

Inactive Publication Date: 2007-01-24
INTEGRATED CRYSTAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the structure of the aforementioned components is very difficult to package in large quantities with existing automatic wire bonding equipment

Method used

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  • Through type photoelectric diode of low parasitic capacitance structure
  • Through type photoelectric diode of low parasitic capacitance structure
  • Through type photoelectric diode of low parasitic capacitance structure

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Embodiment Construction

[0032] The content of the present invention can be revealed through the description of the following embodiments in conjunction with the relevant drawings. refer to Figure 4 , Figure 4is the structure of a high-speed photodiode according to an embodiment of the present invention. This photodiode is made on a silicon substrate 12, which is, for example, an N-type silicon chip with high resistivity, but it can also be a P-type, and its doping is low enough to be close to the degree of intrinsic semiconductor, so that the penetrating depletion region can be deeper to reduce junction capacitance. A heavily doped P+ layer is formed on the active region of each photodiode by diffusion or ion distribution to form the upper electrode 42 and form a PN junction with the N-type substrate. Then plate a layer of passivation glass or insulating layer 46, open a contact window in the active area with the protective layer 46 and form an active area wiring pad 41 with metal, this active a...

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Abstract

This invention discloses a reach-through photo-electric diode having an active bonding pad formed above an optical active region to reduce the parasitic capacitance between the bonding pad and a base plate and characterizing that part of the back of the base plate is etched so as to make a groove by etching under the optical active region to form a floating membrane, the removed thickness of the floating membrane meets the condition of the depletion of the diode bonding face, so the serial resistor of the base plate can be eliminated completely to increase the width and flexibility and that any solid substances are filled in the groove to strengthen the intensity of the floating membrane when packaging , besides, an un-etched stand is just under the active bonding pad to support the membrane when wiring.

Description

technical field [0001] The present invention relates to the improvement of the structure of light-emitting diodes, especially relates to the structural improvement of reducing the series resistance and parasitic capacitance of light-emitting diodes and etching a grove on the substrate so that the junction of the diodes forms a suspended tympanic membrane to eliminate the series resistance. Background technique [0002] Modern photodiodes (photodiodes) are widely used in high-speed optical communications. Two important indicators of the performance of photodiodes for this application are bandwidth and sensitivity. These two factors seriously degrade the quality of the photodiode due to the parasitic capacitance present in it and the series resistance of the substrate. There have been many high-speed photodiode designs and commercial products previously. One of them is constructed as figure 1 as shown, figure 1 Schematic diagram of the construction of a PIN photodiode comm...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L31/075H01L31/105H01L33/38
Inventor 谢正雄黄上达黄进文林建中
Owner INTEGRATED CRYSTAL TECH
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