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Nitride semiconductor device and method for manufacturing same

A technology of nitride semiconductor and manufacturing method, which is applied in the direction of semiconductor devices, semiconductor lasers, laser components, etc., can solve the problems of insufficient improvement of contact resistance, difficulty in manufacturing semiconductor laser devices, etc., and achieve excellent material utilization and easy cleavage , the effect of carbon concentration reduction

Active Publication Date: 2007-05-02
PANASONIC CORP
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Problems solved by technology

[0009] However, in the conventional method, the improvement of the contact resistance was not sufficient, and it was also found that, for the reasons explained in detail later, when the technology of forming unevenness on the back surface of the substrate is adopted at the mass production level, it is difficult to manufacture with high material yield. Problems with Semiconductor Laser Devices

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  • Nitride semiconductor device and method for manufacturing same
  • Nitride semiconductor device and method for manufacturing same
  • Nitride semiconductor device and method for manufacturing same

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no. 1 approach

[0056] Hereinafter, a first embodiment of a nitride semiconductor device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

[0057] First, refer to FIG. 2 . FIG. 2 schematically shows a section of a nitride semiconductor device of this embodiment, that is, a GaN-based semiconductor laser. The element cross section shown in the figure is a plane parallel to the end face of the resonator, and the longitudinal direction of the resonator is perpendicular to the cross section.

[0058] The semiconductor laser of this embodiment includes an n-type GaN substrate (thickness: about 100 μm) 10 doped with n-type impurities, and a semiconductor stacked structure 100 provided on the surface (Ga surface) of the n-type GaN substrate 10 .

[0059] The semiconductor stacked structure 100 includes: n-type GaN layer 12, n-type AlGaN cladding layer 14, GaN optical guiding layer 16, InGaN multiple quantum well ...

Embodiment approach 2

[0088] Another embodiment of the nitride semiconductor device of the present invention will be described with reference to FIGS. 6 and 7 .

[0089] The embodiment shown in FIG. 6 has the same configuration as the semiconductor laser device of Embodiment 1 except that the flat region on the back surface of the n-type GaN substrate is covered with the insulating layer 36 .

[0090] As shown in Figure 6, SiO may remain on a part of the back surface of the substrate 2 Insulating layer 36 such as film. Although it is necessary to remove the insulating film from the region where the n-side electrode 34 should be in contact with the back surface of the substrate, even if a part of the insulating film remains as the insulating layer 36 around the n-side electrode 34, it does not affect the contact characteristics. In addition, by remaining SiO on the back of the substrate 2 If the insulating layer 34 is formed such that the light (stray light) leaked from the active layer 18 to the ...

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Abstract

The present invention relates to a nitride semiconductor device, the nitride semiconductor device (100) is provided with an n-GaN substrate (1); a semiconductor multilayer structure which is formed on a main plane of the n-GaN substrate (1) and includes a p-type region and an n-type region; a p-side electrode (32) in contact with a part of the p-type region included in the semiconductor multilayer structure; and an n-side electrode (34) provided on a rear plane of the substrate (1). The rear plane of the substrate (1) includes a rough surface region (40a) and a flat surface region (40b), and the n-side electrode (34) covers at least a part of the rough surface region (40a).

Description

technical field [0001] The present invention relates to a nitride semiconductor device and a manufacturing method thereof. Background technique [0002] Using III-V nitride semiconductor materials headed by gallium nitride (GaN) (Al x Ga y In 1-x-y The blue-violet semiconductor laser made of N(0≤x≤1, 0≤y≤1) is a key device for realizing ultra-high-density recording of optical disc devices, and has reached a practical level now. Higher output of blue-violet semiconductor lasers not only enables high-speed writing to optical discs, but also is an essential technology for the development of new technical fields such as application to laser displays. [0003] In recent years, GaN substrates are considered to be powerful as substrates necessary for manufacturing nitride semiconductor devices. GaN substrates are superior to conventionally used sapphire substrates in terms of crystal lattice integration and heat dissipation. In addition, unlike the case where the sapphire subs...

Claims

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Application Information

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IPC IPC(8): H01S5/323H01L21/28
CPCH01S5/0425H01L33/382H01L33/32H01L33/20H01L33/40H01S5/32341H01S5/0207H01S5/04254
Inventor 长谷川义晃石桥明彦横川俊哉
Owner PANASONIC CORP
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