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Micron level sheet-like barium titanate crystal and its preparation method

A flaky barium titanate, micron-scale technology, applied in the field of piezoelectric ceramics, can solve problems such as difficulty in use and particle shape damage

Inactive Publication Date: 2007-05-16
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the shape of the particles is destroyed after crushing, making it difficult to use

Method used

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  • Micron level sheet-like barium titanate crystal and its preparation method
  • Micron level sheet-like barium titanate crystal and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 3

[0046] Example 3: Preparation of Bi 4 Ti 3 O 12 Flake crystals.

[0047] take Bi 2 O 3 10.00g, TiO 2 2.57g, NaCl5.53g, KCl7.05g, mixed by ball milling for 8h and then dried. The temperature was raised to 1080°C for 1 hour, and then lowered to room temperature. The heating rate was 5°C / min, and the cooling rate was 1°C / min. Obtain disc-shaped Bi 4 Ti 3 O 12 The crystals are about 10 μm in size and about 0.5 μm in thickness, with uniform distribution and good dispersion.

Embodiment 6

[0052] Example 6: Preparation of BaBi 4 Ti 4 O 15 Flake crystals. BaCl 2 - KCl molten salt system.

[0053] Take the Bi prepared in Example 3 4 Ti 3 O 12 10.00g, BaCO 3 1.68g, TiO 2 0.68g, BaCl 2 9.11g, KCl3.26g, heat up to 1080 ℃ and keep for 3 hours, and then drop to room temperature. The heating rate was 5°C / min, and the cooling rate was 1°C / min. Get square BaBi 4 Ti 4 O 15 The crystals are about 10 μm in size and 1 μm in thickness, with uniform distribution and good dispersion.

Embodiment 11

[0062] Example 11: Preparation of BaTiO using ion exchange method 3 Flake crystals.

[0063] The purpose of this example is to prepare BaTiO 3 Flake crystals.

[0064] Preparation of BaBi using Example 6 4 Ti 4 O 1510.00g is used as the reaction raw material, and BaCO is taken separately 3 5.62g, KCl 17.18g, using butanone medium, magnetic stirring for 15min and drying. The mixture was placed in a covered alumina crucible, and the temperature was raised to 950°C for 3 hours, with a heating rate of 5°C / min and a cooling rate of 5°C / min.

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Abstract

The invention discloses a preparing method of micrometer grade piece-shaped barium titanate crystal in the piezo-electric ceramic technological domain, which comprises the following steps: adopting salt fusing method to prepare BaBi4Ti4O15 as former; setting the molar rate of BaBi4Ti4O15 crystal, BaCO3 and KCl powder at 1: 2-5: 1-2; insulating under 900-1000 Deg C for 1-5h; washing through ultrasound; removing KCl and Bi2O3 in the sintered material; transmitting micrometer grade piece-shaped barium titanate crystal into BaTiO3 crystal with even grain size at 10*10*1 mum evenly. The crystal is fit for preparing Templated Grain Growth, which is fit for piezo-electric ceramic seed.

Description

technical field [0001] The present invention relates to a kind of micron-scale flaky barium titanate (BaTiO 3 ) crystal and a preparation method thereof, belonging to the technical field of piezoelectric ceramics. Background technique [0002] Piezoelectric materials are widely used in ultrasonic devices, sonar, surface acoustic filters, piezoelectric motors and other industrial and defense fields. The commonly used high-performance piezoelectric materials are (100) slices of lead zirconate titanate (PZT) and lead magnesium niobate (PMNT) single crystals. (its piezoelectric strain coefficient d 33 >1500pC / N). However, due to the complicated preparation technology and high cost of single crystal materials, the scope of application is restricted. The preparation technology of common polycrystalline materials is mature, but due to the random orientation of grains, the performance cannot be compared with that of single crystal materials. The d of PMNT ceramics with the sa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C01G23/00C04B35/626H01L41/187H10N30/853
Inventor 周和平刘丹严永科
Owner TSINGHUA UNIV