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Oscillator

A technology of oscillators and power supplies, applied in power oscillators, electric solid-state devices, semiconductor devices, etc., can solve problems such as inability to obtain noise characteristics

Inactive Publication Date: 2007-06-27
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] However, even if a buried trench MOSFET is used, the low-frequency noise can only be improved by about 1 / 3 to 1 / 5 compared with a surface trench MOSFET. Therefore, there is a problem that the oscillator using it cannot obtain good noise characteristics.

Method used

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  • Oscillator
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0134] FIG. 8 is a circuit diagram showing a circuit configuration of an oscillator in Embodiment 1 of the present invention. FIG. 8( a ) is an example of a cross-coupled differential oscillator using a buried trench type nMOSFET, and FIG. 8( d ) shows its Examples of general circuit configurations. The oscillator includes: an LC resonance circuit 37 including an inductor and a capacitor, transistors 12 and 13 composed of nMOSFETs whose drains are connected to the LC resonance circuit 37 and connected to each other in a differential pair, and the sources of the transistors 12 and 13 are connected to each other. The current source 36 connected between the common connection part and the ground part (specifically, the ground wiring, that is, the power supply wiring on the low potential side to which the ground potential GND is applied), and the drain of one transistor 13 are connected. The output terminal (Vout is the oscillation output signal).

[0135] The first feature of thi...

Embodiment approach 2

[0163] FIG. 10 is a circuit diagram showing a circuit configuration of an oscillator in Embodiment 2 of the present invention. FIG. 10( a ) is an example of a cross-coupled nMOSFET differential oscillator using buried trench nMOSFETs, and FIG. 10( d ) shows An example of its general circuit configuration. The first feature of this circuit is that the transistors 12 and 13 are buried trench nMOSFETs, and the buried trench nMOSFETs shown in FIG. 6( a ), FIG. 6( b ), and FIG. 7( a ) may be used. The second feature is that the power supply potential Vdd is supplied to the base terminals b12 and b13 of the transistors 12 and 13 . Specifically, the base terminals b12 and b13 are connected to a power supply wiring on the high potential side for supplying the power supply potential Vdd via wiring.

[0164] Here, assuming that the voltage drop in the current source 36 is Voff, then, by connecting the base terminals b12 and b13 to the power supply wiring on the high potential side, a v...

Embodiment approach 3

[0186] FIG. 11 is a circuit diagram showing a circuit configuration of an oscillator in Embodiment 3 of the present invention. FIG. 11(a) is an example of a cross-coupled nMOSFET differential oscillator using buried trench nMOSFETs, and FIG. 11(d) shows An example of its general circuit configuration. The first feature of this circuit is that the transistors 12 and 13 are buried trench nMOSFETs, and the buried trench nMOSFETs shown in FIG. 6( a ), FIG. 6( b ), and FIG. 7( a ) may be used.

[0187]The second feature of this circuit is that the base terminal b12 of the transistor 12 is connected to the resistors 38 and 39 in order to supply a potential corresponding to the voltage value of the resistor distribution power supply voltage Vdd. Resistors 38 and 39 are connected in series between a high-potential power supply wiring that supplies power supply potential Vdd and a low-potential power supply wiring (ground wiring) that supplies ground potential GND. When the base-sourc...

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PUM

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Abstract

In the inventive oscillator, field effect transistors (12,13) included therein as amplifying elements are ones of embedded channel type, each of which has a body region formed on a semiconductor substrate; source and drain regions formed on the body region and having different conductivity types from the body region; an embedded channel region formed between the source and drain regions; and a gate electrode formed over the embedded channel region via a gate insulating film. Body terminals (b12,b13), electrically connected to the body region, each are further connected to a power supply wire to which a power supply potential (Vdd) is applied.

Description

technical field [0001] The present invention relates to oscillators comprising field effect transistors (MOSFETs). Background technique [0002] In recent years, mobile phones and short-distance wireless communication have become popular, and oscillators are indispensable components in transmitters and receivers of such communication networks. In particular, in order to realize an inexpensive and highly functional oscillator, a semiconductor integrated circuit integrating transistors, inductors, capacitors, and resistors on a semiconductor substrate is used. In a semiconductor integrated circuit including such an oscillating circuit, the Bi-CMOS process capable of integrating bipolar transistors and CMOS circuits is used, the analog circuit part is formed using bipolar transistors, and the digital circuit part such as memory uses CMOS to form an integrated circuit. However, with the development of semiconductor processing technology, the degree of refinement is becoming hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8238H03B5/12H01L27/092H03K3/354
CPCH01L27/088H03B5/1228H01L27/092H03B5/1215H03B5/1203H03K3/0322H01L27/0617H03K3/354H03K3/0315
Inventor 井上彰片山幸治高木刚
Owner PANASONIC CORP