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CMOS image sensor and method for fabricating the same

A technology of image sensor and manufacturing method, applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device, etc., capable of solving the problems of complex driving method and high energy consumption

Inactive Publication Date: 2007-07-04
DONGBU ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, CCD not only has complicated driving methods, high energy consumption, but also requires multiple photolithography processes
[0005] In addition, it is difficult for CMOS image sensors to integrate control circuits, signal processing circuits, and analog / digital conversion circuits (A / D conversion) into the chip of a charge-coupled device to miniaturize the product

Method used

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  • CMOS image sensor and method for fabricating the same
  • CMOS image sensor and method for fabricating the same
  • CMOS image sensor and method for fabricating the same

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Embodiment Construction

[0041] Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0042] Hereinafter, a CMOS image sensor and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

[0043] 5a is a layout showing a unit pixel of a 4T-type CMOS image sensor according to the present invention, and FIG. 5b is a cross-sectional view of the CMOS image sensor along line VI-VI' of FIG. 5a.

[0044]Referring to FIG. 5a, an active region is defined on a semiconductor substrate, and a device isolation layer is formed on a portion other than the active region. One photodiode PD is formed in a portion having a larger width in the active region, and gate electrodes 105, 205, 305, and 405 of four transistors over...

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Abstract

A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes a semiconductor substrate having a photodiode region and a transistor region defined therein, first and second gate electrodes formed on the photodiode region of the semiconductor substrate with a gate insulating layer interposed therebetween, the first and second electrodes connected in a '[subset]' shape spaced a predetermined interval from each other, a first conductivity type diffusion region formed in the photodiode region including between the first and second gate electrodes, spacer insulating layers formed on sidewalls of the first and second gate electrodes, and a floating diffusion region formed in the transistor region.

Description

technical field [0001] The invention relates to a complementary metal oxide semiconductor (CMOS) image sensor. Background technique [0002] In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal. The image sensor is classified into a charge coupled device (CCD) and a CMOS image sensor. [0003] A CCD includes a plurality of photodiodes (PDs), a plurality of vertical charge-coupled devices (VCCDs), a horizontal charge-coupled device (HCCD), and a sense amplifier. PDs that convert optical signals into electrical signals are arranged in a matrix. A plurality of VCCDs are vertically formed between the photodiodes to transfer charges generated in each photodiode in a vertical direction. The HCCD horizontally transfers the charge transferred from the VCCD. The sense amplifier reads out the charges transferred in the horizontal direction to output an electric signal. [0004] However, CCD not only has a complicated drivi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L29/78H01L29/423H01L21/822H01L21/336H01L21/28
CPCH01L27/14603H01L27/14689H01L27/14609H01L27/146
Inventor 任劲赫
Owner DONGBU ELECTRONICS CO LTD