Dislocation-free silicon monocrystal production method

A manufacturing method, silicon single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., to achieve the effect of meeting the demand

Active Publication Date: 2007-07-11
内蒙古中环领先半导体材料有限公司 +1
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  • Abstract
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  • Application Information

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Problems solved by technology

[0002] It is well known that in the crystal lattice of silicon crystals, since the included angles between (110) crystal plane and (111) crystal plane are 90° and 35°16′, dislocations on the (111) crystal plane with an included angle of 90° and Consistent crystal orientation, using the traditional crystal pulling process to produce single crystals also has dislocation defects. Therefore, in order to produce dislocation-free single crystals, dislocations must be eliminated, and overcoming dislocation defects has always been It is a technical problem in the crystal pulling process

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  • Dislocation-free silicon monocrystal production method

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Embodiment Construction

[0019] The single crystal furnace adopted in the present invention is JRDL-800, CG6000 type single crystal furnace, pressure in the furnace: 1.3-1.6 * 103Pa (15-20Torr); thermal system is Φ16~18 " graphite thermal system; quartz crucible is Φ16 ~18″quartz crucible, crucible liter ratio: 1.0:0.128; seed crystal type is P type ; decompression protection gas is high-purity argon; argon flow: 40-60L / min.

[0020] Specific operating requirements

[0021] Seeding

[0022] Since it is difficult to eliminate dislocations in a single crystal with a crystal orientation, the operator is required to have a clear retraction tendency for the seeded crystal. The diameter of the seeded crystal is not less than 5mm, and the retractable ratio is about 100%. / min, the seeding length should be greater than the requirement of crystal orientation, and the specific length is generally about 200mm.

[0023] put shoulders

[0024] Since the single crystal with crystal orientation is a symmetrica...

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Abstract

The invention discloses a crystal drawing technique of silicon monocrystal in the semiconductor and solar photoelectric devices < and110> and making method of non-dislocation monocrystal and modification in the graphite heat system, which comprises the following steps: (1) introducing crystal with diameter not less than 5mm; setting the narrowing or widening rate at 100% and crystal drawing speed not less than 5mm / min and crystal drawing length at 150-300mm; (2) setting the shouldering speed at 0.2-1. 5mm / min; (3) making the heat drawing speed of monocrystal at 1. 0-3. 0mm / min and end drawing speed at 0.5-2. 0mm / min in the miter technique; (4) epilog.

Description

technical field [0001] The invention relates to a crystal pulling process of silicon single crystal, in particular to a method for manufacturing a <110> dislocation-free single crystal suitable for semiconductor and solar photoelectric devices and an improvement to the graphite thermal system used in the manufacturing method. technical background [0002] It is well known that in the crystal lattice of silicon crystals, since the included angles between (110) crystal plane and (111) crystal plane are 90° and 35°16′, dislocations on the (111) crystal plane with an angle of 90° and <110 >Consistent crystal orientation, using the traditional crystal pulling process to produce <110> single crystals also has dislocation defects. Therefore, in order to produce <110> dislocation-free single crystals, dislocations must be eliminated, and overcoming dislocation defects has always been It is a technical problem in the crystal pulling process. Contents of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B29/06C30B35/00C30B15/14Y10T117/1068
Inventor 沈浩平汪雨田胡元庆尚伟泽周建华李翔李海静
Owner 内蒙古中环领先半导体材料有限公司
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