The invention discloses a method for preparing a (110) float zone silicon crystal. The key point of the technical scheme is that: 1, in the seeding technology, by controlling and adjusting the descending speed of a lower shaft and adjusting the power, the seeding neck diameter is controlled in a range from 2 to 6 mm, wherein the seeding neck diameter is more than or equal to 1.5 times the diameter of a single crystal; 2, in the shouldering technology, by controlling and adjusting the descending speed and rotating speed of the lower shaft and the descending speed and rotating speed of an upper shaft and adjusting the power, the shouldering angle is 50+/-5 degrees; and 3, in the ending technology, the ending length is more than 1.2 times the diameter of the single crystal, and the minimum tail diameter is less than or equal to 5mm. The method overcomes the defects that the (110) silicon single crystal prepared by the conventional direct pulling method has high impurity content and cannot meet the requirement on the silicon single crystal of a high-efficiency solar cell, and successfully prepares a low-impurity content and long-service life (110) dislocation-free float zone silicon crystal by a floating zone method, wherein the (110) float zone silicon crystal has the dislocation density of less than or equal to 500 units/cm<2> and the minority carrier lifetime of more than or equal to 300us, and meets the requirement of a silicon material for preparing the high-efficiency solar cell.