Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nitrogen-doped directionally solidified casting monocrystalline silicon and preparation method thereof

A technology of directional solidification and monocrystalline silicon, which is applied in the field of semiconductors, can solve the problems of reducing the manufacturing cost of solar cells and low mechanical strength, and achieve the effects of high mechanical strength, cost reduction and manufacturing cost reduction

Inactive Publication Date: 2009-12-02
ZHEJIANG UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a nitrogen-doped directional solidification cast single crystal silicon, which overcomes the disadvantage of low mechanical strength of silicon materials in the prior art, can be cut into thinner silicon wafers and applied to solar cells, and reduces the manufacturing cost of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitrogen-doped directionally solidified casting monocrystalline silicon and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] First spread the dislocation-free monocrystalline silicon block with a thickness of 20mm on the bottom of the crucible, then place 240kg of polysilicon in the crucible, and add 20mg of dopant boron to realize furnace loading. Vacuum the furnace chamber and feed nitrogen gas, the purity of nitrogen gas is 99.999%, the pressure of nitrogen gas is 10Torr, and the flow rate is 100L / min. The 5mm thick monocrystalline silicon block is heated and kept at a temperature above 1430°C, so that the 5mm thick monocrystalline silicon block close to the polysilicon, all the polysilicon and boron are melted into liquid, forming a silicon melt. Then pour cooling water into the bottom of the crucible, and raise the heat preservation cover in the furnace at a speed of 1mm / min, so that the silicon melt gradually solidifies directionally from the bottom up, and passes through the unmelted 15mm thick single crystal silicon laid on the lower part of the bottom of the crucible The block is use...

Embodiment 2

[0028]First spread the dislocation-free monocrystalline silicon block with a thickness of 10mm to the bottom of the crucible, then place 240kg of polysilicon in the crucible, and add 20mg of dopant boron to realize furnace loading. Vacuum the furnace chamber and feed nitrogen gas, the purity of nitrogen gas is 99.9999%, the pressure of nitrogen gas is 10Torr, and the flow rate is 10L / min. The 3mm thick single crystal silicon block is heated and kept at a temperature above 1450°C, so that the 3mm thick single crystal silicon block close to the polysilicon, all the polysilicon and boron are melted into liquid, forming a silicon melt. Then blow cooling helium into the bottom of the crucible, and lift the insulation cover at a speed of 3mm / min, so that the silicon melt gradually solidifies from the bottom upwards, and passes through the unmelted 7mm thick monocrystalline silicon block laid on the lower part of the bottom of the crucible Nitrogen-doped single crystal silicon is for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Life expectancyaaaaaaaaaa
Login to View More

Abstract

The invention discloses nitrogen-doped directionally solidified casting monocrystalline silicon, which contains boron, gallium and phosphorus with the concentration of between 1*10 and 1*10 / cm and nitrogen with the concentration of between 1*10 and 5*10 / cm. The invention also discloses a preparation method for the nitrogen-doped directionally solidified casting monocrystalline silicon, which comprises the following steps: using cheap nitrogen to replace expensive argon to be taken as protective gas; and taking partial unmelted dislocation-free monocrystalline silicon blocks as a seed crystal to perform directional solidification and casting on the monocrystalline silicon. The preparation method reduces the production cost of the monocrystalline silicon and improves the mechanical strength of the monocrystalline silicon. A casting monocrystalline silicon product obtained by the method has high mechanical strength, can be used for preparing a high-efficiency wafer solar cell, and greatly reduces the production cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to nitrogen-doped directionally solidified cast single crystal silicon and a preparation method thereof. Background technique [0002] Energy and the environment are two major issues that are widely concerned in the world today. As a renewable green energy, solar energy has naturally become the focus of people's development and research. Since Bell Laboratories in the United States successfully developed the first monocrystalline silicon solar cell in 1954, through the unremitting efforts of the global scientific and technological and industrial circles, solar cell technology and industry have achieved tremendous development. The development of solar cells is mainly based on semiconductor silicon materials. [0003] Generally, the preparation of single crystal silicon is obtained by Czochralski technology or zone melting technology, which can be used in the electronics indus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/06C30B11/06
Inventor 余学功杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com