N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof

A silicon single crystal, resistivity technology, applied in the field of solar cell materials, can solve the problems of low utilization rate of high-efficiency solar cell materials, large axial variation range of resistivity of N-type phosphorus-doped single crystal silicon ingots, etc. The effect of large-scale application, improved utilization, and simple operation

Active Publication Date: 2012-07-11
ZHEJIANG UNIV
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a method for preparing N-type cast silicon single crystal with uniform doping resistivity, which can control the resistivity of about 90% of N-type phosphorus-doped single crystal silicon ingot in th

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof
  • N-type casting monocrystalline silicon with uniform doping resistivity and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] First, dislocation-free raw material single crystal silicon block with a thickness of 15mm was spread over the bottom of the crucible, and then 240kg of high-purity electronic polysilicon material was put into the crucible, and 53.04mg of phosphorus and 1.74g of gallium were mixed into the furnace. After vacuuming the furnace chamber, let in argon gas, adjust the position of the heat preservation cover in the furnace and heat it to 1440℃, so that the polysilicon material, phosphorous, gallium and the 5mm thick raw monocrystalline silicon block near the polysilicon are heated, and the temperature is maintained at 1440℃ Above, the 5mm thick raw material single crystal silicon block, phosphorous, gallium, and all polysilicon materials close to the polysilicon are melted into a liquid to form a silicon melt. Pass cooling air into the bottom of the crucible, and raise the insulation cover at a speed of 1mm / min, so that the silicon melt gradually solidifies from the bottom to t...

Embodiment 2

[0028] First, the dislocation-free raw material single crystal silicon block with a thickness of 20mm is spread all over the bottom of the crucible, and then 240kg of metallurgical grade boron-phosphorus-compensated polysilicon material (contains a total of 2.35mg of boron and 30.29mg of phosphorus) is put into the crucible and mixed at the same time. Put 45.46mg of phosphorus and 2.49g of gallium into the furnace. After vacuuming the furnace chamber, let in argon gas, adjust the position of the heat preservation cover in the furnace and heat it to 1450℃, so that the polysilicon material, phosphorus, gallium and the 7mm thick raw monocrystalline silicon block close to the polysilicon are heated, and the temperature is maintained at 1450℃ Above, the 7mm thick raw material single crystal silicon block, phosphorous, gallium, and all polysilicon materials close to the polysilicon are melted into liquid to form a silicon melt. Pass cooling air into the bottom of the crucible, and ra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an N-type casting monocrystalline silicon with a uniform doping resistivity and a preparation method thereof. The preparation method comprises the following steps of: paving dislocation-free materials of monocrystalline silicon blocks at the bottom of a crucible; then placing a polycrystalline silicon material, a phosphorus doping agent and gallium into the crucible; raising temperature and fusing the monocrystalline silicon material, the phosphorus doping agent, the gallium and a part of materials of monocrystalline silicon blocks close to the polycrystalline silicon; and growing a monocrystalline silicon body by using a casting method. According to the monocrystalline silicon with the uniform doping resistivity, the resistivity of about 90% N-type phosphorus doping phosphorus doping cast ingots can be controlled in the range of 1.0-2.0 omega.cm, therefore, the utilization rate of the N-type monocrystalline silicon in the process of manufacturing a solar cell is effectively improved, the manufacturing cost of the solar cell is remarkably lowered, the preparation method is simple to operate and easy to popularize and use in the photovoltaic industry.

Description

Technical field [0001] The invention belongs to the field of solar cell materials, and specifically relates to an N-type cast silicon single crystal with uniform doping resistivity and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible and inexhaustible clean energy. Using the photoelectric conversion characteristics of semiconductor materials to prepare solar cells, solar energy can be converted into electrical energy. In the last ten years, the output of solar cells has grown at an annual rate of 30-40%, and the solar energy industry has become one of the fastest growing industries in the market. [0003] Crystalline silicon material is one of the main materials for preparing solar cells. Under normal circumstances, the preparation of monocrystalline silicon is obtained through Czochralski or zone melting technology, which can be used in the electronics industry and the solar energy industry. The solar cells prepared by it have high effi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B29/06C30B11/00
Inventor 余学功肖承全杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap