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Germanium-doped directionally solidified casting monocrystalline silicon and preparation method thereof

A technology of directional solidification and monocrystalline silicon, applied in self-solidification, single crystal growth, single crystal growth, etc., can solve the problems of limiting the application of germanium-doped Czochralski silicon single crystal, high cost and energy consumption, and achieve dislocation density Effect of small size, reduced light attenuation, and cost reduction

Inactive Publication Date: 2009-12-02
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost and energy consumption of Czochralski silicon single crystal preparation are quite high, which greatly limits the application of germanium-doped Czochralski silicon single crystal in the field of solar cells.

Method used

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  • Germanium-doped directionally solidified casting monocrystalline silicon and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Spread the germanium-doped monocrystalline silicon blocks with a thickness of 20 mm and a thickness of 20 mm on the bottom of the crucible, in which the concentration of germanium is 8×10 19 / cm 3 , and then put 3kg of germanium block and 240kg of polysilicon together on the raw material germanium-doped monocrystalline silicon block, and add 20mg of dopant boron to realize furnace loading. The furnace chamber was evacuated, and Ar gas was used as a protective gas. Adjust the position of the heat preservation cover in the furnace and heat it to above 1410°C to heat boron, germanium, polysilicon and the 10mm thick raw material germanium-doped monocrystalline silicon block near the polysilicon, and keep the temperature above 1410°C so that the 10mm thick block near the polysilicon Raw material germanium-doped monocrystalline silicon block, all polycrystalline silicon, germanium and boron are melted into liquid to form silicon melt. Then pour cooling water into the bottom...

Embodiment 2

[0027] First spread the dislocation-free raw material monocrystalline silicon block with a thickness of 10mm to the bottom of the crucible, then place 0.3kg of germanium block and 240kg of polysilicon on the single crystal silicon block, and add 5mg of dopant boron to realize the loading. furnace. The furnace chamber was evacuated, and Ar gas was used as a protective gas. Adjust the position of the heat preservation cover in the furnace and heat it to above 1410°C to heat boron, germanium, polysilicon and the 2mm thick raw material single crystal silicon block close to the polysilicon, and keep the temperature above 1410°C so that the 2mm thick raw material single crystal block close to the polysilicon The chunks of crystalline silicon, all polysilicon, germanium and boron are melted into liquids to form a silicon melt. Then, cool nitrogen gas is introduced into the bottom of the crucible, and the insulation cover in the furnace is raised at a speed of 2mm / min, so that the si...

Embodiment 3

[0030] First spread the dislocation-free raw material monocrystalline silicon block with a thickness of 5mm on the bottom of the crucible, then place 30g of germanium material and 240kg of polycrystalline silicon on the single crystal silicon block, and add 6g of dopant gallium to realize furnace loading . The furnace chamber was evacuated, and Ar gas was used as a protective gas. Adjust the position of the heat preservation cover in the furnace and heat it to above 1410°C, so that gallium, germanium, polysilicon and the 1mm thick raw material single crystal silicon block close to the polysilicon are heated, and the temperature is kept above 1410°C, so that the 1mm thick raw material single crystal block close to the polysilicon The chunks of crystalline silicon, all polysilicon, germanium and boron are melted into liquids to form a silicon melt. Finally, pour cooling water into the bottom of the crucible, and raise the heat preservation cover in the furnace at a speed of 3mm...

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Abstract

The invention discloses germanium-doped directionally solidified casting monocrystalline silicon, which contains boron, gallium or phosphorus with the concentration of between 1*10 and 1*10 / cm and germanium with the concentration of between 1*10 and 5*10 / cm. The invention also discloses a preparation method for the germanium-doped directionally solidified casting monocrystalline silicon, which comprises the following steps: placing polycrystalline silicon, the germanium and an electroactive doping agent on a dislocation-free monocrystalline silicon block paved on the bottom of a crucible; completely melting the polycrystalline silicon, the germanium and the doping agent and partially melting the dislocation-free monocrystalline silicon block by thermal field regulation; and performing directional solidification by heat exchange, and using a part of unmelted dislocation-free momocrystalline silicon block as a seed crystal to induce to grow the germanium-doped casting monocrystalline silicon from bottom to top. The product has strong mechanical strength and long minority carrier lifetime, can be used for preparing a high efficiency wafer solar cell, and greatly reduces the production cost.

Description

technical field [0001] The invention belongs to the technical field of semiconductor silicon materials, and in particular relates to a casting single crystal silicon doped with germanium and a preparation method thereof. Background technique [0002] Solar cell power generation is currently the cleanest and environmentally friendly form of sustainable energy utilization. The development of solar cells is based on the research of semiconductor silicon materials. Using the photoelectric conversion properties of semiconductor materials, solar cells can be prepared to convert solar energy into electrical energy. [0003] Silicon single crystal is one of the main materials for producing solar cells. Generally, the preparation of single crystal silicon is obtained by Czochralski technology or zone melting technology, which can be used in the electronics industry and solar photovoltaic industry. The solar cells prepared by it have high efficiency, but the cost of crystal preparati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B11/06
Inventor 余学功杨德仁
Owner ZHEJIANG UNIV
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