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TFT array semi-exposure photoetching technology

A lithography process and semi-exposure technology, which is applied in photosensitive material processing, micro-lithography exposure equipment, and photolithography exposure equipment, etc., can solve the problems of high production cost and large number of processes, so as to increase production capacity and shorten the production time. The effect of process time and cost saving

Inactive Publication Date: 2007-07-11
SHANGHAI SVA LIQUID CRYSTAL DISPLAY
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Problems solved by technology

In the production of ordinary thin-film transistor arrays, in order to form the above-mentioned pattern, it is necessary to use more than 5 photomasks and perform more than 5 photolithography processes to achieve it. The production cost is high and the number of processes is large.

Method used

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  • TFT array semi-exposure photoetching technology

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Embodiment Construction

[0011] The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

[0012] As shown in Figures 1a-1d, a TFT array semi-exposure photolithography process, a photomask plate with a pattern lower than the critical resolution of the exposure equipment is set at the channel position of the thin film transistor, and a semiconductor film layer and a metal film have been formed. A photolithographic process is carried out on the substrate of the layer.

[0013] After the first wet etching of the metal film layer and the dry etching of the semiconductor, the photoresist remaining in the previous step is etched to remove the residual photoresist in the channel part, and then the metal film layer is subjected to the second step. Second wet etching.

[0014] For a glass substrate that already has a gate pattern and has formed a semiconductor film layer and a metal f...

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Abstract

A TFT array half exposure photo etching technique sets photo mask plate lower than the marginal resolution ratio pattern at the slot of the thin film transistor, applying photo etching at the liner of the already formed half semi conductor film and metal film. It can be used for TFT-LCD silicon island pattern and source / leakage pattern formation, using one time photo etching process to form the above pattern, with one more less photo etching times, reduced photo etching mask plate cost and processes, playing a big role in saving cost, reducing process time and increasing production volume.

Description

technical field [0001] The invention relates to a TFT array semi-exposure photolithography process Background technique [0002] In order to form a thin film transistor (TFT, Thin Film Transistor) array on a transparent insulating substrate (such as glass), in the production process of the TFT array, it is necessary to use a certain number of photomasks (Photo Mask) to repeatedly form a film on the substrate, Exposure, etching and other photolithography processes to form the leads, electrodes, terminals, and various insulating film layers of the TFT array. Since the mass production of TFT-LCD began in 1993, in order to reduce production costs and improve product yield, various manufacturers have continuously changed the structural design of TFTs to reduce the number of photolithography processes in the array process. The TFT structure has undergone channel (Channel) protection type, channel etching type, and finally evolved into the currently commonly used contact hole (Con...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F7/26H01L21/027H01L29/786
Inventor 谢晓明谭智敏
Owner SHANGHAI SVA LIQUID CRYSTAL DISPLAY
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