Semiconductor device and method of manufacturing the same

A technology for semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, and can solve problems such as deterioration

Inactive Publication Date: 2007-07-11
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the barrier metal layer 13 is oxidized, thereby deteriorating

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The invention will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to only the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals are used to refer to the same elements throughout.

[0037] It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0038] It...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A semiconductor device and a manufacturing method thereof for preventing gate electrode degradation and gate current leakage. The semiconductor device includes a gate insulating layer including an H-k (high dielectric) material on a semiconductor substrate, a barrier metal layer including a metal alloy on the gate insulating layer, and a gate electrode layer formed on the barrier metal layer. Illustratively, the barrier metal layer includes at least one of TaAlN (tantalum aluminum nitride) or TiAlN (titanium aluminum nitride). The barrier metal layer can include an oxidation-resistant material so that oxidation of the barrier metal layer is prevented during a subsequent annealing of the semiconductor device in an oxygen atmosphere. Thus, degradation of a gate electrode is prevented, and gate current leakage due to degradation of the gate electrode is prevented.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a semiconductor device and a manufacturing method thereof that prevent gate electrode deterioration and gate current leakage. Background technique [0002] A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) including a gate insulating layer and a gate electrode layer sequentially stacked on a semiconductor substrate has been used as a semiconductor device to satisfy demands for high-speed operation and low power consumption. [0003] More specifically, gate insulating layers of MOSFETs have been made thinner to provide semiconductor devices with high integration, high performance, and capable of operating at low voltages. [0004] Typically, the gate insulating layer is made of SiO 2 form. However, in SiO 2 In the case of a thin gate insulating layer, tunneling current is generated by electrons or holes directly tunneling t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/49H01L29/78H01L21/28H01L21/336
CPCH01L29/4966H01L29/7833H01L21/28556H01L29/6659H01L21/28088H01L29/517H01L21/18
Inventor 白贤锡李银河丁炫硕韩成基梁旼镐
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap