Fluorine process for cleaning semiconductor process chamber

a technology of process chamber and fluorine, which is applied in the field of fluorine gas, can solve the problems of unavoidable deposits of residues on the chamber wall and other surfaces, and achieve the effect of effectively removing silicon residues

Inactive Publication Date: 2003-01-16
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

0005] The invention is a process for cleaning or removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F.sub.2) as the principal precursor reagent. Molecular fluorine gas has the advantage of not being a global warming gas, unlike other fluorine-containing gas compounds conventionally used for chamber cleaning such as NF.sub.3, C.sub.2F.sub.6 and SF.sub.6.
0006] I discovered that fluorine atoms and radicals produced by plasma decomposition of molecular fluorine gas effectively remove silicon, silicon oxide, and silicon nitride residues. In addition, I discovered that molecular fluorine gas effectively removes silicon residues without any plasma.

Problems solved by technology

The chemical byproducts and unused reagents of such deposition or etch processes are mostly exhausted from the chamber by an exhaust pump, but some residue unavoidably deposits on the chamber wall and on other surfaces within the chamber.
One disadvantage of cleaning processes using such fluorine-containing gas compounds is that such gases are believed to contribute to global warming if they are released to the earth's atmosphere after use.

Method used

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Examples

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Embodiment Construction

[0007] The chamber cleaning processes of the invention were tested in a conventional, commercially available vacuum chamber for performing CVD processes for depositing films on large substrates or workpieces such as the glass substrates used for fabricating thin film transistor (TFT) flat panel displays.

[0008] In the commercial production of such displays, it often is desirable to deposit different films in succession while the substrate remains in the chamber. Therefore, a process for cleaning the interior of the chamber preferably should be capable of removing all the residues created by all of the different deposition processes performed in the chamber.

[0009] I discovered that a mixture of atomic fluorine (F) and molecular fluorine gas (F.sub.2) produced by plasma decomposition of molecular fluorine gas (F.sub.2) would successfully clean any of the three films commonly deposited in a plasma CVD chamber for fabricating TFT displays or other silicon-based semiconductor devices - si...

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Abstract

<heading lvl="0">Abstract of Disclosure</heading> A process for removing residue from the interior of a semiconductor process chamber using molecular fluorine gas (F2) as the principal precursor reagent. In one embodiment a portion of the molecular fluorine is decomposed in a plasma to produce atomic fluorine, and the resulting mixture of atomic fluorine and molecular fluorine is supplied to the chamber whose interior is to be cleaned. In another embodiment the molecular fluorine gas cleans the semiconductor process chamber without any plasma excitation. Molecular fluorine gas has the advantage of not being a global warming gas, unlike fluorine-containing gas compounds conventionally used for chamber cleaning such as NF3, C2F6 and SF6.

Description

Background of InventionField of the Invention[0001] The invention relates to processes for cleaning or removing residue from the interior surfaces of a vacuum chamber used for fabricating electronic devices. More specifically, the invention relates to the use of fluorine gas in such a process.Background of the Invention[0002] Processes for fabricating electronic devices containing semiconductors generally include steps in which layers or features of material are deposited or patterned (i.e., etched) within a vacuum chamber, generally called a semiconductor process chamber. The chemical byproducts and unused reagents of such deposition or etch processes are mostly exhausted from the chamber by an exhaust pump, but some residue unavoidably deposits on the chamber wall and on other surfaces within the chamber. Such residue must be cleaned or removed periodically in order to maintain consistent process conditions and to prevent the residue from flaking off and contaminating the electron...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B08B5/00B08B7/00C23C16/44H01L21/02H01L21/205H01L21/302H01L21/3065
CPCC23C16/4405Y02C20/30Y10S134/902Y10S438/905Y02P70/50H01L21/02
Inventor GOTO , HARUHIRO HARRYHARSHBARGER , WILLIAM RSHANG , QUANYUANLAW , KAM S
Owner APPLIED MATERIALS INC
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