Vapor delivery system for solid precursors and method of using same

Abstract

A vaporizer delivery system including a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber. The coated wire substrate is drawn past a heat source at a predetermined speed to rapidly heat and vaporize the sublimatable solid precursor.

Description

[0001] 1. Field of the Invention[0002] The present invention relates to a vaporizer, and more particularly, to a vaporizer delivery system comprising a sublimatable solid precursor material applied to a wire substrate for vaporizing and achieving a continuous uninterrupted delivery of a vaporized precursor to a downstream semiconductor process chamber.[0003] 2. Description of the Related Art[0004] Chemical vapor deposition (CVD) has been extensively used for preparation of films and coatings in semiconductor wafer processing. CVD is a favored deposition process in many respects, for example, because of its ability to provide highly conformable and high quality films, at relatively fast processing times. Further, CVD is beneficial in coating substrates of irregular shapes including the provision of highly conformable films even with respect to deep contacts and other openings.[0005] In general, CVD techniques involve the delivery of gaseous reactants to the surface of a substrate whe...

AI Technical Summary

Problems solved by technology

The type and composition of the layers that can be formed using CVD is limited by the ability to deliver the reactants or reactant precursors to the surface of the substrate.

Analogous attempts have been made to deliver solid reactants to a CVD deposition chamber, but with much less success.

However, this procedure has been unsuccessful in reliably and reproducibly delivering a solid precursor to the reaction chamber for a number of reasons.

Initially, it is difficult to ensure complete saturation of the fast flowing carrier gas stream because of the limited amount of exposed surface area of the solid precursor in the vaporizer system and need for uniform temperature to provide maximum sublimation.

However, using an excess of material can result in a substantial waste of precursor materials.

Further, it is difficult to vaporize a solid at a controlled rate such that a reproducible flow of vaporized solid precursor can be delivered to the process chamber.

Lack of control of solid precursor sublimation is, at least in part, due to the changing surface area of the bulk solid precursor as it is vaporized.

This ever-changing rate of vaporization results in a continuously changing and non-reproducible flow of vaporized solid precursor for deposition in the process chamber.

As a result, processes using such vaporized solid precursors cannot be controlled adequately and effectively.

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