Semiconductor device and method for manufacturing the same

Abstract

At least a laminate of a gate insulating film 6 and a gate electrode 7 and an active region 13 are formed on a silicon substrate 1, and an underlying interlayer insulating film 10 is further formed. Then, a conductor 11a connected to the gate electrode 7, and a conductor 11b that is a dummy conductor and is connected to the active region 13 are formed simultaneously on the underlying interlayer insulating film 10. Thereafter, an interlayer insulating film 12 is formed on the underlying interlayer insulating film 10 by a plasma process. At this time, charging current from a plasma 14 is emitted through the conductor 11b, which is a dummy conductor.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device and a method for manufacturing the same. BACKGROUND ART [0002] In recent years, in a semiconductor device constituted by semiconductor integrated circuits, high integration has undergone great development. In particular, in semiconductor devices of MIS (metal insulated semiconductor) type, miniaturization and high performance of elements such as transistors have been promoted in order to cope with high integration, and there is a demand for further miniaturization and high performance. [0003] In a process for forming conductors of such a semiconductor device, plasma processing including plasma CVD or plasma etching has been increasingly utilized. This is because in the process for forming conductors of a semiconductor device, there is a limitation regarding the amount to be subjected to heat treatment because of diffusion of impurities, the heat resistance of a metal material for conductors and the like, ...

AI Technical Summary

Benefits of technology

[0050] When the third method for manufacturing a semiconductor device is used, compared with the example of FIG. 13 shown in “Background Art”, more rays in the ultraviolet region are incident on the active region serving as a diode when forming another insulating layer on the insulating layer obtained in the step (c) by a plasma process. Therefore, a

Problems solved by technology

This is because in the process for forming conductors of a semiconductor device, there is a limitation regarding the amount to be subjected to heat treatment because of diffusion of impurities, the heat resistance of a metal material for conductors and the like, and the amount to be subjected to heat treatment can be reduced by the plasma process.

However, with the increased utilization of the plasma process, device damage due to the plasma process tends to occur.

In a semiconductor device that is subjected to such plasma charging damage, the device characteristics are deteriorated, so that the semiconductor device is defective.

In the problem of plasma charging damage, in particular, deterioration in the reliability of gate insulating films constitutes a serious problem.

Therefore, the gate insulating film 26 is damaged and thus the device characteristics are damaged.

However, higher integration of the semiconductor device has been making the gate insulating film thinner year by year

Images