Semiconductor device and method of manufacturing the same

Abstract

There is provided a semiconductor device which is manufactured via steps of forming a capacitor which is obtained by forming in sequence an upper electrode, a dielectric film formed of ferroelectric material or high-dielectric material, and a lower electrode on a semiconductor substrate, then forming an interlayer insulating film on the capacitor, then planarizing a surface of the interlayer insulating film by the CMP polishing, then removing a moisture attached to a surface of the interlayer insulating film or a moisture contained in the interlayer insulating film by applying the plasma annealing using an N2O gas, and then forming a redeposited interlayer film on the interlayer insulating film.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a division of U.S. patent application Ser. No. 09 / 594,091, filed on Jun. 15, 2000.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor device and a method of manufacturing the same and, more particularly, a semiconductor device represented by a nonvolatile semiconductor memory (FeRAM: Ferroelectric Random Access Memory) using ferroelectric material for a dielectric film of a capacitor, or a volatile semiconductor memory (DRAM: Dynamic Random Access Memory) using high-dielectric material for the dielectric film of the capacitor, or a hybrid system LSI consisting of such memory device and a logic device, and a method of manufacturing the same. [0004] 2. Description of the Prior Art [0005] In recent years, FeRAM which uses the ferroelectric material for the dielectric film of the capacitor become the focus of public attention as the nonvolatile semiconducto...

AI Technical Summary

Benefits of technology

"The present invention provides a semiconductor device and a method of manufacturing it that can form wiring with good precision and prevent degradation of the capacitor. The method includes steps of forming an insulating film over the capacitor using ferroelectric material or high-dielectric material, planarizing the insulating film, and then forming second wiring on the insulating film. The second insulating film is formed to cover or fill cavities exposed from the planarized surface of the first insulating film to prevent short-circuiting of wiring. The second insulating film is preferably at least 100 nm thick to prevent slits from degrading the capacitor. The plasma annealing process can remove moisture from the insulating film and prevent degradation of the capacitor."

Problems solved by technology

However, in Patent Application Publication (KOKAI) Hei 11-238855, since the film thickness of the aluminum wiring pattern used as the bit line is thick, the level of surface unevenness of the interlayer insulating film formed on the wiring pattern is increased.

Thus, the problem that patterning precision of the upper wiring is lowered is caused.

In particular, if the interlayer insulating film is formed by the plasma enhanced CVD method, the level of the surface unevenness of the interlayer insulating film is ready to increase.

In this case, there is a possibility that hydrogen attacks into the insulating film in forming the HDP CVD SiO2 film to thus reduce the oxide dielectric film of the capacitor

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