Semiconductor device

a semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of reducing the resistance of the charge transfer mos, generating harmonic noise when switching a current, and latching, so as to reduce the resistance of the well region and enhance the robustness against latching
US20050056898A1Inactive Publication Date: 2005-03-17SANYO ELECTRIC CO LTD
13 Cites 17 Cited by

Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SANYO ELECTRIC CO LTD
Publication Date
2005-03-17
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, and a P-type well region is formed in the N-type epitaxial silicon layer. A P+-type buried layer abutting on a bottom of the P-type well region and an N+-type buried layer partially overlapping with the P+-type buried layer and electrically isolating the P-type well region from the single crystalline silicon substrate are formed. And then, an MOS transistor is formed in the P-type well region.
Need to check novelty before this filing date? Find Prior Art

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a semiconductor device, specifically to a charge pump device with large current capacity used for a power supply circuit. Performance of the charge pump device can be improved and a latch up can be prevented with this invention. 2. Description of the Related Art Video equipment in recent years such as a camcorder, a digital still camera (DSC) and a mobile phone with DSC use CCDs (charge-coupled devices) to capture an image. A CCD drive circuit for driving the CCDs requires a power supply circuit that provides both positive and negative high voltages (over 10 volts) and a large current (several milliamperes). A switching regulator is used for that purpose today. The switching regulator can generate a high voltage with high performance, i.e. with high power efficiency (output power / input power). However, it has a drawback to generate a harmonic noise when switching a current. Therefore, the power supp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More