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Method of manufacturing a semiconductor device

a manufacturing method and semiconductor technology, applied in the testing/measurement of individual semiconductor devices, semiconductor/solid-state devices, instruments, etc., can solve the problems of slow process, wear of stamps and ink changes, and few stamps

Inactive Publication Date: 2005-04-28
OTAKI MIKIO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009] It is an objective of the invention to provide a semiconductor device and a method of manufacturing the same, whereby a laser impression is formed on, the semiconductor device without any negative effects on the device surface of the semiconductor wafer (chip) due to exothermic heat generated during formation of the laser impression.
[0011] According to the present invention, the laser impression can be formed without damaging the device surface of the semiconductor wafer (chip).

Problems solved by technology

However, the stamp printing has a few disadvantages, for example wear of the stamp and changing of ink.
Also, a laser impression that is to be applied to another mold package must be set up, a slowing the process and increasing cost.
When the laser impression is formed in such a WCSP, thermal energy of laser light is conducted at the device surface (a surface of integrated circuit), whereby aluminum wiring is damaged and bonding between aluminum pads and wiring patterns may be destroyed.

Method used

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  • Method of manufacturing a semiconductor device
  • Method of manufacturing a semiconductor device
  • Method of manufacturing a semiconductor device

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Embodiment Construction

[0019] Preferred embodiments of the present invention will hereinafter be described in detail with reference to the accompanying drawings. The drawings used for this description typically illustrate major characteristic parts in order that the present invention will be easily understood.

[0020]FIG. 1 is an oblique perspective illustration showing a semiconductor device 100 according to a first preferred embodiment of the present invention. FIG. 2 is a cross-sectional view showing the semiconductor device 100 according to the first preferred embodiment of the present invention. The semiconductor device 100 includes a semiconductor chip 10, a pad electrode 12, a wiring pattern 14, a protection layer 16, an insulating layer 18, a bump electrode 20, resin 22, a solder ball 24, a low thermal conductivity layer 26 and an impression 28. The semiconductor chip 10 indicates a semiconductor substrate having an integrated circuit 11. The pad electrode 12 is formed on the semiconductor chip, an...

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PUM

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Abstract

A low thermal conductivity layer is formed on a back surface of a semiconductor wafer or chip, and a laser impression is formed on the low thermal conductivity layer. The laser impression can be formed without damaging the device surface of the semiconductor wafer or chip due to exothermic heat of the laser impression.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a wafer-level chip size package (WCSP). [0003] The present application claims priority under 35 U.S.C. §119 to Japanese Patent Application No. 2001-155148, filed May 24, 2001, which is herein incorporated by reference in its entirety for all purposes. [0004] 2. Description of the Related Art [0005] The WCSP is one of semiconductor mold packages, a that has simple packaging. A plurality of pads are constructed for a plurality of semiconductor chips, are formed on a silicon substrate at the wafer-level. Then, bump electrodes for an assembly are formed, after wiring patterns connecting the pads are formed. Next, solder balls for packaging are formed on the bump electrodes. Finally, the wafer-level silicon substrate is divided into chip size pieces. At this time, between the pads, the wir...

Claims

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Application Information

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IPC IPC(8): H01L21/56H01L21/60H01L23/00H01L23/31H01L23/367H01L23/12H01L23/544
CPCH01L23/3114H01L2224/0401H01L23/544H01L24/11H01L24/12H01L24/94H01L2223/54406H01L2223/5442H01L2223/54473H01L2223/5448H01L2223/54486H01L2224/0231H01L2224/131H01L2224/16H01L2224/274H01L2924/01004H01L2924/01013H01L2924/01029H01L2924/01039H01L2924/01074H01L2924/01078H01L2924/14H01L23/3677H01L2924/014H01L2924/01033H01L2924/01019H01L2924/00013H01L2924/01005H01L2924/01006H01L2224/13099H01L2924/181H01L2924/12042H01L2224/05124H01L2224/05147H01L2224/05647H01L2224/94H01L24/13H01L24/05H01L24/03H01L2924/0001H01L2224/05008H01L2224/05569H01L24/02H01L2924/00H01L2924/00014H01L2224/02H01L2224/03H01L2224/11H01L2924/013
Inventor OTAKI, MIKIO
Owner OTAKI MIKIO