High-heat conductivity si-containing material and its manufacturing method
a technology of high-heat conductivity and manufacturing method, which is applied in the field of high-heat conductivity si-containing materials, can solve the problem of far smaller actual heat conductivity than the heat conductivity designed
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examples 1 to 2
(EXAMPLES 1 to 2 AND COMPARATIVE EXAMPLES 1 to 5)
[0026] Silicon (lattice constant: 0.54311 nm, heat conductivity: 133 W / mK) was fired in an Ar atmosphere at 1,450° C. for 2 hours using a sagger and a setter both shown in Table 1, whereby were produced melt-solidified samples (Si-alone samples) of Examples 1 to 2 and Comparative Examples 1 to 5.
[0027] The samples were measured for lattice constant, heat conductivity and boron content in Si phase. The results are shown in Table 1.
[0028] Incidentally, lattice constant was calculated from a diffraction profile obtained by X-ray diffractometry at room temperature, by the WPPD method.
[0029] Boron content in Si phase was determined by conducting a solution treatment to extract silicon alone and then conducting an ICP emission spectral analysis, and heat conductivity was measured by a laser flash method at room temperature.
TABLE 1LatticeHeatBoron contentconstantconductivityin Si phaseKiln tool(nm)(W / mK)(wt. %)Ex. 1Alumina sagger,0.5431...
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