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High-heat conductivity si-containing material and its manufacturing method

a technology of high-heat conductivity and manufacturing method, which is applied in the field of high-heat conductivity si-containing materials, can solve the problem of far smaller actual heat conductivity than the heat conductivity designed

Inactive Publication Date: 2005-06-09
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0006] According to the present invention, there is provided a highly heat-conductive Si-containing material characterized by containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less.

Problems solved by technology

However, Si-containing materials produced using the above kiln tool have had a problem that the actual heat conductivity is far smaller than the designed heat conductivity.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

examples 1 to 2

(EXAMPLES 1 to 2 AND COMPARATIVE EXAMPLES 1 to 5)

[0026] Silicon (lattice constant: 0.54311 nm, heat conductivity: 133 W / mK) was fired in an Ar atmosphere at 1,450° C. for 2 hours using a sagger and a setter both shown in Table 1, whereby were produced melt-solidified samples (Si-alone samples) of Examples 1 to 2 and Comparative Examples 1 to 5.

[0027] The samples were measured for lattice constant, heat conductivity and boron content in Si phase. The results are shown in Table 1.

[0028] Incidentally, lattice constant was calculated from a diffraction profile obtained by X-ray diffractometry at room temperature, by the WPPD method.

[0029] Boron content in Si phase was determined by conducting a solution treatment to extract silicon alone and then conducting an ICP emission spectral analysis, and heat conductivity was measured by a laser flash method at room temperature.

TABLE 1LatticeHeatBoron contentconstantconductivityin Si phaseKiln tool(nm)(W / mK)(wt. %)Ex. 1Alumina sagger,0.5431...

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Abstract

A highly heat-conductive Si-containing material containing a Si phase whose lattice constant at room temperature is controlled at a level of more than 0.54302 nm but 0.54311 nm or less. Firing is conducted using a kiln material containing no B compound. With this highly heat-conductive Si-containing material and the process for production thereof, a reduction in heat conductivity can be prevented and a high heat conductivity can be exhibited stably.

Description

TECHNICAL FIELD [0001] The present invention relates to a highly heat-conductive Si-containing material and a process for producing the material. BACKGROUND ART [0002] Since Si-containing materials (porous or dense) containing Si as a Si phase such as, for example, silicon-silicon carbide composite materials containing Si and SiC as main phases or materials containing silicon carbide as a main phase have a high strength and moreover are superior in heat resistance, oxidation resistance and heat conductivity, they are currently in use in various applications such as kiln tool, jig for heat treatment, honeycomb filter and the like. [0003] At the time of the above-mentioned Si-containing material, there has been mainly used a kiln tool made of a dense SiC material to which BN, B4C and C have been added in an amount of 1% as a superaddition, or of a carbon having been coated with BN as a reaction-preventive layer. [0004] However, Si-containing materials produced using the above kiln too...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C04B35/573C04B35/565C22C28/00
CPCC04B35/565C04B35/573C04B2235/428C04B2235/72C04B2235/9623C04B2235/761C04B2235/80C04B2235/9607C04B2235/728C04B35/515C04B35/56
Inventor MORIMOTO, KENJIKAWASAKI, SHINJISAKAI, HIROAKI
Owner NGK INSULATORS LTD
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