Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

Inactive Publication Date: 2005-06-30
SEMITOOL INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0018] This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent co

Problems solved by technology

Further, copper layers that are electroplated in the disclosed manner ex

Method used

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  • Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
  • Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
  • Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

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[0068] Comparison of Acid Copper Plating With and Without Seed Layer Enhancement

[0069] Semiconductor wafers 1, 2 and 3 were each coated with a 200 Angstrom PVD copper seed layer. In accordance with the present invention, wafers 1 and 2 had seed layer enhancement from citric acid and EDTA baths, respectively, the compositions of which are set forth below: [0070] Bath for Wafer 1: 0.1 M Cu SO4+0.2 M Citric acid+0.05 M H3B03 in D.I. water at pH 9.5, temperature 25° C. [0071] Bath for Wafer 2: 0.1 M Cu SO4+0.2 M EDTA acid+0.05 H3BO3 in D.I. water at pH 12.5, temperature 25° C. [0072] Wafer 3 did not have any seed layer enhancement.

[0073] The three wafers were then plated with a 1.5 micron copper layer from an acid copper bath under identical conditions. The following Table compares the uniformities, as deduced from sheet resistance measurements, of the three wafers after the deposition of a copper layer having a nominal thickness of 1.5 microns.

TABLE 1Non-uniformityEnhancementCurren...

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Abstract

This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This Application is a continuation of U.S. application Ser. No. 09 / 885,232 filed on Jun. 20, 2001 now U.S. Pat. No. 6,811,675. U.S. application Ser. No. 09 / 885,232 is a Continuation of U.S. application Ser. No. 09 / 387,033 filed on Aug. 31, 1999, now U.S. Pat. No. 6,290,833. U.S. application Ser. No. 09 / 387,033 is a Continuation of application International Application No. PCT / US99 / 06306 filed on Mar. 22, 1999. PCT / US99 / 06306 is a continuation-in-part of U.S. application Ser. No. 09 / 045,245, filed on Mar. 20, 1998, and claims the benefit of U.S. Provisional Application No. 60 / 085,675 filed on May 15, 1998.BACKGROUND OF THE INVENTION [0002] In the fabrication of microelectronic devices, application of one or more metallization layers is often an important step in the overall fabrication process. The metallization may be used in the formation of discrete microelectronic components, such as read / write heads, but is more often used to interc...

Claims

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Application Information

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IPC IPC(8): C23C28/00C23C28/02C25D3/38C25D5/10C25D7/12H01L21/288H01L21/445H01L21/768H05K3/42
CPCC23C28/322C23C28/34C25D3/38C25D5/10H01L21/2885C25D7/123H01L21/76868H01L21/76873H01L21/76877H01L2221/1089H05K3/423H01L21/76843C25D5/627H01L21/20
Inventor CHEN, LINLIN
Owner SEMITOOL INC
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