Unlock instant, AI-driven research and patent intelligence for your innovation.

Scribe street width reduction by deep trench and shallow saw cut

a trench and trench cutting technology, applied in the field of semiconductor wafer dicing, can solve the problems of significant reliability risks, inability to safely reduce, and most significant limitation in reducing the distance between adjacent circuit chips, and achieve the effect of implementing

Inactive Publication Date: 2005-06-30
HOWARD GREGORY E +1
View PDF10 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

"The invention is a method to make semiconductor chips by cutting a wafer into individual chips. The method involves creating shallow trenches on the surface of the wafer and then using a cutting saw to cut the wafer along the trenches. This results in chips that are separated from each other, with no damage to the active areas of the chip. The method is cost-effective and easy to implement in semiconductor manufacturing, as it uses existing equipment and techniques. The technical effects of the invention include improved efficiency in chip production and better reliability of the chips."

Problems solved by technology

For reasons of mechanical stability at high rotating speeds, the blades have to possess a particular thickness, which cannot safely be reduced.
In particular the third of these restrictions, namely the generation of cracks, creates the most significant limitation with respect to decreasing the distance between adjacent circuit chips.
In addition, those cracks represent significant reliability risks, since they tend to grow and widen under thermal and mechanical stress and thus eventually imperil the functionality of the integrated circuit.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Scribe street width reduction by deep trench and shallow saw cut
  • Scribe street width reduction by deep trench and shallow saw cut
  • Scribe street width reduction by deep trench and shallow saw cut

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015]FIG. 1 illustrates schematically the cross section of a portion of a semiconductor wafer, generally designated 100, which has been singulated into a plurality of semiconductor chips 101. The vertical dimension of the wafer has been expanded in FIG. 1 for clarity. The semiconductor material of the wafer may be silicon, silicon germanium, germanium, gallium arsenide, aluminum gallium phosphide, indium phosphide, gallium phosphide, or any other semiconductor material used for fabricating semiconductor devices. Each chip 101 is in principle a cuboid, which has a top surface 102, a bottom surface 103, and four vertical side surfaces, of which only two surfaces 104 and 105 are indicated in FIG. 1. The top surface 102 includes the active electronic device 110, which may for some wafers include an integrated circuit, for other wafers a discreet device such as a diode, especially a light-emitting diode, or a controlled rectifier, or a power transistor. The bottom surface 103 is the pas...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

In a method to singulate a semiconductor wafer (100) into chips, trench streets (107) of predetermined depth (105a) are formed across the first, active wafer surface (102) to define the outline of the chips (101). Thereafter, the fabrication of the active first wafer surface is completed and protected. Then, the wafer is flipped to expose the second wafer surface (103), and the wafer is subjected to a cutting saw. The saw is aligned with the trenches in the first surface so that the saw cuts the second surface along streets (106), which extend the trenches through the wafer. The saw is stopped cutting at a depth (105b), when the saw streets just coalesce with the trench streets, respectively, whereby the chips are completely singulated.

Description

FIELD OF THE INVENTION [0001] The present invention is related in general to the field of semiconductor devices and more specifically to a method of dicing semiconductor wafers. DESCRIPTION OF THE RELATED ART [0002] With most semiconductor products, for example integrated circuits, transistors and diodes, a large number of elements are manufactured simultaneously on a large semiconductor wafer of silicon, gallium arsenide, gallium phosphide etc. The semiconductor industry employs the terms “singulation”, “dicing technologies” or “scribing technologies” to refer to those techniques for obtaining a large number of functional chips from each semiconductor wafer. Two dicing methods are particularly well known in the art: the grinding-cutting method, using a blade or wire saw, and the scribing method, using a diamond point. Modern silicon technology prefers the cutting method using high-speed rotating blades. For reasons of mechanical stability at high rotating speeds, the blades have to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/301H01L21/304H01L21/68H01L21/78H01L23/544
CPCH01L21/3043H01L21/6836H01L21/78H01L23/544H01L2924/0002H01L2221/68327H01L2924/00
Inventor HOWARD, GREGORY E.SWANSON, LELAND S.
Owner HOWARD GREGORY E