Electrolytic method for photoresist stripping

a technology of photoresist stripping and electrolysis method, which is applied in the field of wet processing, can solve the problems of affecting the ability to remove the photoresist, affecting the removal ability of the photoresist, and presenting environmental concerns for the removal of the photoresis

Inactive Publication Date: 2005-08-04
IBM CORP
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014] It is yet another object of the present invention to provide an apparatus for photoresist stripping t

Problems solved by technology

Consequently, removal of the photoresist can present some problems.
Also, the thermal stressing and ultraviolet hardening of the photoresist affects the ability to remove the photoresist.
Furthermore, the chemical removal of photoresists continues to pose environmental concerns.
The resist stripping involves a chemical attack of the stripper on the resist resulting in its surface modification, swelling, an

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrolytic method for photoresist stripping
  • Electrolytic method for photoresist stripping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

)

[0020] In describing the preferred embodiment of the present invention, reference will be made herein to FIG. 1 of the drawings in which like numerals refer to like features of the invention.

[0021]FIG. 1 depicts an apparatus for stripping a photoresist. An electrolytic cell 5 is used for electrolytic stripping of a photoresist. A piecepart 12 is placed in a tank 10 containing a bath of neutral electrolytic solution 14. The piecepart 12 includes photoresist material 16 on a conductive surface 18. Also immersed in the bath is a counter electrode 20. A voltage potential is applied across the conductive surface 18 and the counter electrode 20 by a power supply 22. Photoresist stripping from the conductive surface 18 is performed in the electrolytic cell 5 with the neutral electrolyte 14, such as sodium citrate, sodium orthophosphate, sodium sulfate, sodium nitrate, ammonium acetate, sodium acetate, or with other non-aggressive, water based ionic conductive chemical. Importantly, a che...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Temperatureaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

Photoresist stripping is performed by having a piecepart with a conductive layer that patterned by the photoresist immersed in a neutral solution. A voltage potential is applied to induce a current between the conductive layer and a counter electrode in neutral solution bath at a specified current density. After a short period of time, on the order of minutes, the photoresist is lifted off the piecepart. The piecepart is then removed from the bath, rinsed and dried.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method for wet processing, and more particularly to a method for removing photoresists by electrostripping. Specifically, the present invention relates to a method of mechanically or physically lifting the photoresist off a surface by the generation of gas bubbles. [0003] 2. Description of Related Art [0004] Photoresists are widely used in electronics industry for pattern definition on a conductive surface before electrolytic plating. Photoresists are light-sensitive compounds, which upon irradiation by a suitable light or other radiation source change their chemical structure. Organic polymer resist layers are usually applied in the form of either a dry film or liquid. If the resist is of a “negative” photo defined type, the underlayer is exposed to a pattern defining artwork and the unexposed portion of the resist is developed off. In a “positive” photo defined type, the exposed ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C25C7/00C25D17/00C25F1/00G03F7/42H05K3/00H05K3/10H05K3/24
CPCC25F1/00G03F7/423H05K3/0073H05K2203/105H05K3/243H05K2203/0264H05K2203/087H05K3/108
Inventor GIRI, AJAY P.KIEFER, STEPHANIE A.RAYNAUD, PATRICE J.SEMKOW, KRYSTYNA W.
Owner IBM CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap