Plasma processing system, plasma processing method, plasma film deposition system, and plasma film deposition method

Abstract

A plasma film deposition apparatus (plasma processing apparatus) is disclosed, which includes a second antenna 11b disposed around an antenna 11a and located outwardly of a ceiling surface, and which supplies the second antenna 11b with an electric current flowing in a direction opposite to the direction of an electric current supplied to the antenna 11a by power supply means, whereby lines of magnetic force, F2, heading in a direction opposite to the direction of lines of magnetic force, F1, appearing at the site of the antenna 11a are generated at the site of the second antenna 11b. Thus, the magnetic flux density in the direction of the wall surface is lowered, even when a uniform plasma is generated in a wide range within a tubular container 2.

Description

TECHNICAL FIELD [0001] This invention relates to a plasma processing apparatus, and a plasma processing method which generate a plasma to process a substrate. [0002] The present invention also relates to a plasma film deposition apparatus, and a plasma film deposition method which generate a plasma to perform film deposition on the surface of a substrate by vapor phase deposition. [0003] Currently, film deposition using a plasma CVD (chemical vapor deposition) apparatus is known in the production of a semiconductor. The plasma CVD apparatus is an apparatus in which a material gas serving as a starting material for a film is introduced into a film deposition chamber within a tubular container, a high frequency is shot from a high frequency antenna to convert the material gas into the state of a plasma, and active excited atoms in the plasma promote a chemical reaction on the surface of a substrate to carry out film deposition. In the plasma CVD apparatus, the high frequency antenna i...

AI Technical Summary

Benefits of technology

[0013] As a result, the plasma processing apparatus can be constituted such that lines of magnetic force heading in a direction opposite to the direction of lines of magnetic force appearing at the site of the antenna are generated at the site of the second antenna, and even when a uniform plasma is generated over a wide range within the tubular container, the magnetic flux density in the direction of the wall surface can be rendered low.

[0052] As a result, the substrate can be located in a region where the electron temperature is low even though the electron density is high. Since the region has a low electron temperature, device destruction of the substrate due to the charging effect can be suppressed.

Problems solved by technology

When the lines of magnetic force (lines of magnetic flux density) passed through the wall (tubular surface) of the tubular container, electrons and ions moved along the lines of magnetic force, so that the electrons and ions impinged on the wall of the tubular container, thus posing the possibility of overheating or causing the occurrence of particles by an etching action.

In this case, it has become difficult to generate a uniform plasma over a wide range relative to the size of the tubular container.

This has caused the risk of lowering the efficiency and decreasing the uniformity of plasma within the tubular container.

With the plasma CVD apparatus (plasma processing apparatus), moreover, the plasma density is so high that a voltage is applied to the electrode on the surface of the semiconductor owing to a potential difference of space, incurring the risk of destroying the semiconductor device (device destruction due to a charging effect).

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