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Plasma etching equipment and etching method

A technology of etching equipment and plasma, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of low fidelity, large distortion of the side wall of the pattern, etc., and achieve the effect of reducing the impact and protecting the side wall

Active Publication Date: 2013-09-11
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Existing plasma processing devices include capacitively coupled plasma etching equipment (Capacitor Coupled Plasma, CCP) and inductively coupled plasma etching equipment (Inductive Coupled Plasma, ICP). In the etching process, especially in deep hole etching, for example, when the aspect ratio of the etched opening or trench is greater than 10, the etched pattern fidelity (Profile) is low, and the sidewall distortion of the pattern is low. Big

Method used

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  • Plasma etching equipment and etching method
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  • Plasma etching equipment and etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0040] The inventor of the present invention provides a plasma etching equipment, including: an etching chamber; a first radio frequency power supply, the first radio frequency power supply provides a radio frequency power supply of 2MHz to 120MHz; a second radio frequency power supply, the second radio frequency power supply The power supply provides 2MHz to 40MHz radio frequency power; connect the power pulse controller of the first radio frequency power and the second radio frequency power, the power pulse controller controls the pulse of the first radio frequency power and the second radio frequency power, so that the first radio frequency The pulse frequency of the power supply is greater than 1000Hz and the pulse frequency of the second RF power supply is less than 1000Hz.

[0041] Specifically, the plasma etching device may be a capacitively coupled plasma etching device or an inductively coupled plasma etching device.

[0042] The first radio frequency power supply is ...

Embodiment 2

[0070] The inventor of the present invention provides a plasma etching equipment, including: an etching chamber; a first radio frequency power supply, the first radio frequency power supply provides a radio frequency power supply of 2MHz to 120MHz; a second radio frequency power supply, the second radio frequency power supply The power supply provides 2MHz to 40MHz radio frequency power; a power pulse controller connected to the first radio frequency power supply and the second radio frequency power supply, the power pulse controller controls the first radio frequency power supply pulse, so that the pulse frequency of the first radio frequency power supply is greater than 1000Hz .

[0071] Specifically, the plasma etching device may be a capacitively coupled plasma etching device or an inductively coupled plasma etching device. The first radio frequency power supply is a source radio frequency power supply (Source RF Power), and the first radio frequency power supply outputs a...

Embodiment 3

[0084] The inventor of the present invention provides a plasma etching equipment, including: an etching chamber; a first radio frequency power supply, the first radio frequency power supply provides a radio frequency power supply of 2MHz to 120MHz; a second radio frequency power supply, the second radio frequency power supply The power supply provides 2MHz to 40MHz radio frequency power; connected to the power pulse controller of the second radio frequency power, the power pulse controller controls the pulse of the second radio frequency power so that the pulse frequency of the second radio frequency power is less than 1000Hz.

[0085] Specifically, the plasma etching device may be a capacitively coupled plasma etching device or an inductively coupled plasma etching device. The first radio frequency power supply is a source radio frequency power supply (Source RF Power), and the first radio frequency power supply outputs a radio frequency power supply of 2MHz to 120MHz radio fr...

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PUM

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Abstract

Disclosed are plasma etching equipment and an etching method. The plasma etching equipment comprises an etching chamber, a first radiofrequency power source, a second radiofrequency power source, and a power pulse controller. The first radiofrequency power source provides radiofrequency power from 2MHz to 120MHz. The second radiofrequency power source provides radiofrequency power from 2MHz to 40MHz. The power pulse controller controls pulse of the first radiofrequency power source and / or second radiofrequency power source, so that the pulse frequency of the first radiofrequency power source is larger than 1000Hz and / or the pulse frequency of the second radiofrequency power source is smaller than 1000Hz. The plasma etching equipment and the etching method have the advantage that sidewall shapes can be improved for the formed etched holes.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a plasma etching device and an etching method. Background technique [0002] With the improvement of the integration level of semiconductor devices, the line width of semiconductor devices is getting smaller and smaller, the control of critical dimensions is becoming more and more important, and the requirements for etching processes are also getting higher and higher. [0003] The etching process is a process for selectively removing the material formed on the surface of the silicon wafer or selectively removing the material of the silicon wafer. The etching process includes wet etching and dry etching. Dry etching has become one of the most commonly used etching processes today due to its high selectivity and strong controllability. [0004] Dry etching is plasma etching. Usually, an etching gas is introduced into a plasma processing device, and the etching gas is io...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
Inventor 倪图强叶如彬吴世鎭
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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