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Method of repairing a pedestal surface

a pedestal and surface technology, applied in the field of pedestal surface repair, can solve the problems of leakage and something to be done, pedestal replacement at great expense, and take between two to three man-hours to repair a single pedestal, and achieve the effect of improving the pedestal repair process

Inactive Publication Date: 2005-10-06
LEE CHIN FONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0016] More specifically, the invention is exemplified by a method of repairing a pedestal heater using a diamond film stuck onto a silicon wafer to polish the surface of the heater and so remove distortion, coatings or surface scratches.

Problems solved by technology

If it is too high, this suggests leakage and something must be done about it.
If the completed repair fails to bring the pressure down the pedestal is replaced at great expense.
The problem with this method is that it can take between two to three man-hours to repair a single pedestal.
Further, whilst the pressure differential is improved, the result is still not as good as is desired, for instance the temperature in a wafer, heated by the pedestal may still not be uniform and quite often the pedestal can fail again within a relatively short period.
Even with such repairs, distortion on the heater surface accumulates until such time as this approach can no longer achieve suitable a backside pressure and the heater must be replaced.
In general, the heater lifetime cannot be extended for more then six months after this repair.
Additionally, there can be other types of heater defects, for example: A) Under-Etching during “Plasma clean” (to remove all traces of Tungsten from the entire chamber before it is open for wetclean), due to a defective endpoint detector or RF generator (an endpoint detector detects plasma wavelengths and whether the tungsten film is completely removed from the chamber and commands that the plasma clean is stopped.
If it is faulty then the chamber will not be cleaned.

Method used

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Embodiment Construction

[0021] The inventors have therefore sought a way of repairing the surface of the pedestal to remove the distortion, coatings or scratches to the top surface of the pedestal. They have developed a method as is now described.

[0022] Firstly a polisher is prepared. At the start (S100), this involves laminating tape onto one surface of a wafer (S102), preferably the shining surface, the wafer ideally being blank. A plastic polymer tape will suffice. Silicon wafers break easily during the polishing process. This tape is used to hold up loose wafer chips when breakage occurs (reducing the number of particles). It can also prevent accidental cuts to a user's fingers as well as providing an improved grip.

[0023] A mineral oil is applied (S104) to the other side of the dummy wafer (that is the side without the tape on it). Preferably this mineral oil should be friendly to semiconductor parts and processes. For instance, the oil could be a fluorinated oil, such as perfluoroalkylether oil. It ...

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Abstract

A method of repairing a pedestal heater uses a diamond film stuck onto a silicon wafer to polish the surface of the heater and so remove distortion, coating or surface scratches.

Description

FIELD OF THE INVENTION [0001] The present invention relates to repairing pedestal surfaces, in particular the top surfaces of pedestal heaters, for instance as are used in chemical vapour deposition (CVD), physical vapour deposition (PVD), semiconductor metal and oxide etching processes or semiconductor processing equipment that require heating or a vacuum to secure the position of a wafer to the pedestal surface. BACKGROUND OF THE INVENTION [0002] Pedestal heaters are for instance used in vapour deposition and etching techniques. The pedestal stands within a reaction chamber, with a wafer sitting atop the pedestal. During the deposition process a reactive gas enters the chamber and is deposited on the wafer, the wafer itself being heated by a heater mechanism within the pedestal. [0003] The wafer is usually clamped to the top of the pedestal by way of differential pressure clamping or electrostatic clamping. Additionally back gases are emitted from the pedestal, around the edges an...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23C16/458
CPCC23C16/4581
Inventor LEE, CHIN FONG
Owner LEE CHIN FONG
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