Solid-state imaging device, method of manufacturing solid-state imaging device and method of driving solid-state imaging device

Abstract

A solid-state imaging device capable of securing sufficient sensitivity and obtaining favorable characteristics is provided. The solid-state imaging device includes a charge-transfer portion 2 provided on one side of each column of light-receiving sensor portions 1, each forming a pixel, arranged in the form of a matrix and a transfer electrode of the charge-transfer portion 2 including a first transfer electrode formed of first electrode layers 3A and 3C and a second transfer electrode formed by electrically connecting first electrode layers 3B and 3D and a second electrode layer 4; the first electrode layers 3B and 3D in the second transfer electrode are independently formed in each of the charge-transfer portion 2; and the first transfer electrodes 3A and 3C and the second electrode layer 4 are laminated in a portion between pixels adjacent to each other in the direction of the charge-transfer portions 2.

Description

CROSS REFERENCES TO RELATED APPLICATIONS [0001] The present invention contains subject matter related to Japanese Patent Application JP 2004-138897 filed in the Japanese Patent Office on May 7, 2005, the entire contents of which being incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a solid-state imaging device including a charge-transfer portion, such as a CCD solid-state imaging device, a method of manufacturing a solid-state imaging device, and a method of driving a solid-state imaging device. [0004] 2. Description of the Related Art [0005] In a CCD solid-state imaging device, a transfer resistor having a CCD structure is provided as a charge-transfer portion, and a signal charge obtained through photoelectric conversion and stored in a light-receiving sensor portion formed of a photodiode is read out to the transfer resistor so that the signal charge is transferred in the transfer resistor. [00...

AI Technical Summary

Benefits of technology

[0035] Therefore, according to an embodiment of the present invention, a solid-state imaging device having favorable characteristics can be obtained in which a sufficient amount of electric charge can be received by light-receiving sensor portions, and sufficient sensitivity and sufficient dynamic range are secured.

[0036] Further, according to an embodiment of the present invention, problems (deterioration in sensitivity, a narrow dynamic range, and the like) conspicuously occurred when a solid-state imaging device is made minute can be solved, so that a solid-state imaging device can be made minute and the increase in the number of pixels and high density of a solid-state imaging device can be obtained. Furthermore, the miniaturization of a solid-state imaging device can also be achieved.

Problems solved by technology

Hence, it is difficult to improve the efficiency in receiving light.

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