Method for manufacturing a magnetic memory device, and a magnetic memory device

Abstract

In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect memory element comprising a tunnel insulating layer disposed between a ferromagnetic material and being electrically insulated from the word line; forming an insulating film for covering the memory element; and forming a bit line so that it is buried in the insulating film wherein the bit line is electrically connected to the memory element and spatially crosses the word line through the memory element disposed therebetween, wherein the method has steps of removing the insulating film on the bit line side to expose the bit line and forming a soft magnetic material layer selectively only on the bit line surface.

Description

CROSS REFERENCE TO RELATED APPLICATION [0001] This application claims priority from Japanese Priority Document No. 2003-066081, filed on Mar. 12, 2003 with the Japanese Patent Office, which document is hereby incorporated by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a method for manufacturing a magnetic memory device and a magnetic memory device. More particularly, the present invention is concerned with a method for manufacturing a nonvolatile magnetic memory device and a magnetic memory device which stores information by utilizing a change of the resistance value caused by changing of the spin direction of a ferromagnetic material to be parallel or non-parallel. [0004] 2. Description of Related Art [0005] As information communication devices, especially small devices for personal use, such as mobile terminals, are rapidly spreading, there are demands for devices constituting such electronic devices, such as a me...

AI Technical Summary

Benefits of technology

The present invention provides methods for manufacturing a magnetic memory device that solve problems of previous methods, such as the need for a separate soft magnetic material layer and the use of a barrier layer. The methods involve forming a first wiring, a magnetoresistance effect type memory element, an insulating film, and a second wiring that crosses the first wiring through the memory element. The second wiring can be formed through a barrier layer and a soft magnetic material layer, and the soft magnetic material layer is selectively formed on the sidewall of the second wiring. The methods have the advantage of efficiently introducing a current magnetic field to the memory element and reducing the number of steps required for the manufacturing process.

Problems solved by technology

Further, no etchback by dry etching is conducted for the soft magnetic material layer, and therefore stability and margin of the process can be secured.

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