High stability and high capacity precursor vapor generation for thin film deposition

Active Publication Date: 2007-05-31
MSP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0015] The present invention also includes an apparatus for vaporizing a liquid for subsequent thin film deposition having at least two vaporizing chambers, each vaporizing chamber having a passage for car

Problems solved by technology

The method is generally limited to vapor generation at rates that are higher than a few milligrams per second.
When the desired vapor generation rate is low, it becomes increasingly more difficult to control the small amount of liquid that needs to be injected.
One disadvantage of the prior art bubbler is that the precursor liquid must be placed in a heated vessel for a prolonged period.
Prolonged thermal contact between the liquid and the hot vessel walls can cause the precursor liquid to thermally decompose to form undesirable

Method used

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  • High stability and high capacity precursor vapor generation for thin film deposition
  • High stability and high capacity precursor vapor generation for thin film deposition
  • High stability and high capacity precursor vapor generation for thin film deposition

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Embodiment Construction

[0024] This invention includes a new approach to liquid vaporization for gas saturation that would overcome the disadvantages of the prior art bubbler of FIG. 1. A small amount of liquid is placed in the vaporizer to minimize thermal decomposition. The new vaporization apparatus is also highly stable and repeatable and capable of generating high purity gas / vapor mixtures that are substantially free of particulate contaminants. The resulting high purity gas / vapor mixture is suitable for use in semiconductor and other industries for film deposition on a substrate for semiconductor device fabrication or other applications

[0025] A vaporization apparatus described in this invention is generally indicated at 100 in FIG. 2. Like reference characters will be used to indicate like elements throughout the drawings. The vaporization apparatus 100 will also be referred to as a diffusion vaporizer. Although gas saturation occurs by vapor diffusion both in the present apparatus as well as the co...

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Abstract

An apparatus for vaporizing a liquid for subsequent thin film deposition on a substrate. The apparatus comprises a housing with an inlet and an outlet and a liquid reservoir. A mechanism controls the liquid level in the reservoir to a substantially constant level. A gas flow passageway extends along side a porous metal wall with interstitial spaces for containing liquid from the reservoir and with a package for a carrier gas to flow along side the porous metal wall, forming a gas/vapor mixture suitable for thin film deposition.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] The present application is based on and claims the benefit of U.S. provisional patent application Ser. No. 60 / 740,029, filed Nov. 28, 2006, the content of which is hereby incorporated by reference in its entirety. BACKGROUND OF THE INVENTION [0002] This invention relates to methods and apparatus for liquid precursor vaporization for thin film deposition and semiconductor device fabrication. The precursor liquid is vaporized in a precise and controlled manner to generate a high purity gas / vapor mixture that is substantially free of particulate contaminants. The gas / vapor mixture is then introduced into a chamber for film deposition and semiconductor device fabrication. [0003] Thin film formation by chemical vapor deposition (CVD) is a well-known process in semiconductor device fabrication. In conventional CVD, a precursor vapor is introduced into a chamber in which one or more semiconductor wafers are held at a suitable temperature and pr...

Claims

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Application Information

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IPC IPC(8): B01D47/00F22B23/00C23C16/00
CPCC23C16/4481C23C16/4482
Inventor LIU, BENJAMIN
Owner MSP
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