Magnetic sensor, production method of the same, and target substance detecting apparatus and biosensor kit using the same

a technology of magnetometer and target substance, which is applied in the direction of analytical tools using chemical indicators, laboratory glassware, instruments, etc., can solve the problems of requiring a large measuring apparatus, and unable to detect the number or concentration of antigens

Inactive Publication Date: 2007-10-11
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0013]The present invention aims at providing a sensor which can solve the problem of detection sensitivity based on relationship between the above-mentioned target substance and label.

Problems solved by technology

Although this method has achieved large contribution in clinical diagnosis since sensitivity is high, there is a problem of safety of a radionuclide, and there is a defect that a facility and an apparatus for exclusive use are necessary.
Using the above optical measurement methods and radiation measurement methods has a demerit that a large measuring apparatus is necessary.
In consequence, there is a problem that, since the number of the immobilized magnetic particles is remarkably different from the number of the adsorbing antigens, there is a possibility that it becomes hard to detect the number or concentration of the antigens.

Method used

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  • Magnetic sensor, production method of the same, and target substance detecting apparatus and biosensor kit using the same
  • Magnetic sensor, production method of the same, and target substance detecting apparatus and biosensor kit using the same
  • Magnetic sensor, production method of the same, and target substance detecting apparatus and biosensor kit using the same

Examples

Experimental program
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Effect test

example 1

[0071]In this example, an example of a production method of a magnetic sensor according to the present invention will be described with FIGS. 2A to 2I.

[0072]On a surface of a silicon wafer 201, a multilayer structure is obtained by sequentially stacking a Cr film 202 at 20 nm film thickness, a Pt film 203 at 20 nm film thickness, an MnIr film 204 at 10 nm film thickness, an FeCo film 205 at 5 nm film thickness, an Al2O3 film 206 at 1.6 nm film thickness, an FeCo film 207 at 5 nm film thickness, an NiFe film 208 at 20 nm film thickness, and a Pt film 209 at 5 nm film thickness by magnetron sputtering (FIG. 2A). As for the Al2O3 film 206, oxygen deficiency is compensated by forming a film using an Al2O3 target, introducing an O2 gas in a film formation chamber, and performing plasma oxidation. Starting from a silicon wafer 201 side, the Cr / Pt multilayer film becomes a base electrode of a TMR element, the Mnlr / FeCo multilayer film becomes a pin layer (layer whose magnetizing direction ...

example 2

[0094]Although the production method of the Au dot pattern using anodic oxidation was described in the first example, Au dots can be also formed into a desired pattern using an Au target which has a needle-shaped section.

[0095]An SiN film 233 at 30 nm film thickness is formed on a surface of the multilayer film structure in the state that the magnetic sensor of FIG. 2D in the first example is formed. Then, a resist film is coated at about 1-μm uniform film thickness by a spin coater. Subsequently, patterning is performed with ultraviolet rays after baking, for example, so that a resist film may cover an area where Au dots are not formed, such as an area other than an area above the sensor element. Then, the multilayer film structure is baked again, and is immersed in a developing solution to be cleaned with deionized water, and then, a resist film with a desired pattern shape is obtained. Next, an acicular Au target and a treated surface are arranged with making the acicular Au targ...

example 3

[0098]Furthermore, by forming micropores in an upper portion of the element by resist film patterning, and forming Au films on the pores, Au dots can be also formed into a desired pattern.

[0099]An SiN film 233 at 30 nm film thickness is formed on a surface of the multilayer film structure in the state that the magnetic sensor of FIG. 2D in the first example is formed. Then, a resist film is coated at about 200 nm uniform film thickness by a spin coater. After baking, holes are formed by radiating electron rays in positions where Au dots are formed. Then, the multilayer film structure is baked again, and is immersed in a developing solution to be cleaned with deionized water, and then, a resist film with a desired pattern shape is obtained. Diameter of the holes formed is about φ50 nm diameter, and the interval between adjacent holes is made larger than the grain size of labeling substances. Subsequently, an Au film is formed in each hole by a low directive film formation apparatus, ...

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Abstract

The present invention provides a magnetic sensor which detects a target substance indirectly by making a labeling substance larger than the target substance bond with the target substance contained in a sample in a detection area, and detecting the labeling substance, comprising a capture area which is relatively easy to capture the target substance, and a non-capture area which is relatively hard to capture the target substance, on a surface of a member which is comprised in a detection area, wherein the capture area is surrounded by the non-capture area. Thereby, the sensor enables to detect comparatively accurately the number and concentration of substances which cannot be directly detected, and enables to be used for detection of various target substances.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a magnetic sensor for target substance detection and its production method, and an apparatus and a kit for target substance detection using this sensor.[0003]2. Description of the Related Art[0004]As a quantitative immunoassay, a radiometric immunity analysis (RIA: radio immunoassay or IRMA: immunoradiometric assay) has been known for many years. This method labels a competitive antigen or an antibody by a radionuclide, and quantitatively measures the antigen from a measurement result of specific radioactivity. Thus, this method labels a target substance, such as an antigen, and measures this indirectly. Although this method has achieved large contribution in clinical diagnosis since sensitivity is high, there is a problem of safety of a radionuclide, and there is a defect that a facility and an apparatus for exclusive use are necessary. Then, methods of using labels, such as a fluoresce...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B01L3/00
CPCB82Y25/00G01N27/745Y10S436/806G01R33/1269G01R33/093
Inventor IKEDA, TAKASHIOKANO, KAZUHISA
Owner CANON KK
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