Thin film transistor array substrate and manufacturing method thereof

Abstract

A thin film transistor array substrate and the manufacturing method thereof are disclosed herein. A first patterned metal layer, an insulating layer, a patterned layer, and a second patterned metal layer are sequentially formed on a substrate. Then, a plurality of scan lines and a plurality of source lines are disposed on the substrate and define a plurality of pixel regions. A plurality of the storage capacitance lines are disposed on the substrate in a direction extending along the scan lines and across the pixel regions, wherein each of the storage capacitance lines is essentially perpendicular to each of the source lines and to form a cross portion. A plurality of patterned thin films are disposed on the storage capacitance lines and above the cross portion.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention generally relates to a liquid crystal display device, and more particularly relates to a thin film transistor (TFT) array substrate for the liquid crystal display device and the manufacturing method thereof.[0003]2. Description of the Prior Art[0004]FIG. 1 is illustrated a plan view of the liquid crystal display according to the prior art. Referring to FIG. 1, scan lines 102 and source lines 109 are disposed to cross to define a plurality of pixel regions. The storage capacitance line (Cs line) 104 is extended over the pixel region to cross the source line 109. An ohmic contact thin film 106, a source electrode 110 and a drain electrode 111 are disposed on the scan line 102. Besides, a pixel electrode 114 is disposed in the pixel region. Wherein, scan lines 102 and the Cs lines 104 are simultaneously formed and there is an insulating layer, not shown in the figure, covered thereon. The Cs line 104 ...

AI Technical Summary

Benefits of technology

[0007]Another object of the present invention is to provide a thin film transistor array substrate and the manufacturing method thereof. It only needs to add a pattern in the second photo-mask to dispose a plurality of patterned thin films at the cross portion of the source lines and the Cs lines without using the extra photo-mask in the process and effectively prevent the short problem causing from the rip of the insulating layer at the cross portion of the source lines and the Cs lines.

[0008]Further object of the present invention is to provide a thin film transistor array substrate and the manufacturing method thereof. The structure of the cross portion of the source lines and the Cs lines is improved to effectively enhance the yield rate of the product and can apply to the liquid crystal display device with all kinds of size.

[0009]The other object of the present invention is to provide a thin film transistor array substrate and the manufacturing method thereof. It utilizes a patterned thin film arranged at the cross portion of source lines and scan lines and between two layers so as to solve the short problem between source lines and scan lines.

[0010]Furthermore object of the present invention is to provide a thin film transistor array substrate and the manufacturing method thereof. It can reduce the frequency for the laser repair and the array testing time to effectively control the product yield without changing the process conditions.

Problems solved by technology

Due to the fact that the complex metal is used, it is difficult to control a good profile of the taper angle because of the etching rate of different materials so as to easily cause the undercut effect.

This defect will cause the light line of the liquid crystal display device while turning on the panel and this panel must perform the array test to find the defect and perform the laser repair.

Further, the panel is scrapping.

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