Low noise amplifier

Inactive Publication Date: 2008-08-28
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0030]Accordingly, the low noise amplifier according to exemplary embodiments of the pres

Problems solved by technology

A radio frequency integrated circuit (RFIC), manufactured using a complementary metal-oxide semiconductor (CMOS) process, is generally considered to be inappropriate for communications requiring high linearity, such as code division multiple access (CDMA) communications, due to its relatively poor performance compared to a bipolar junction transistor (BJT).
Recently, though, developments enabling gate lengths of MOS transistors to be reduced have resulted in lower prices of CMOS RFICs.
Therefore, the third order intermodulation components 2F1-F2 and 2F2-F1 are difficult to eliminate completely by filtering.
The amplifier in FIG. 2, however, does

Method used

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Embodiment Construction

[0042]Embodiments of the present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments are shown. The invention, however, may be embodied in various different forms, and should not be construed as being limited only to the illustrated embodiments. Rather, these embodiments are provided as examples, to convey the concept of the invention to one skilled in the art. Accordingly, known processes, elements, and techniques are not described with respect to some of the embodiments of the present invention. Throughout the drawings and written description, like reference numerals will be used to refer to like or similar elements.

[0043]It will be understood that, although the terms first, second, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. For example, a first element could be termed a second element, and...

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Abstract

A low noise amplifier includes a main amplifier configured to amplify a first input signal to generate a first output signal and an auxiliary amplifier configured to amplify a second input signal to generate a second output signal. The auxiliary amplifier is coupled to the main amplifier for superposing the second output signal and the first output signal. The low noise amplifier also includes an adjusting unit configured to adjust a time constant for reducing a third order intermodulation distortion of the superposed signal in response to a control signal. The adjusting unit is configured to generate the second input signal based on the time constant and the first input signal.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]A claim of priority is made to Korean Patent Application No. 10-2007-0019515, filed on Feb. 27, 2007, the subject matter of which is hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments of the present invention relate to a low noise amplifier, and more particularly, to a low noise amplifier for reducing third order intermodulation distortion.[0004]2. Description of the Related Art[0005]A radio frequency integrated circuit (RFIC), manufactured using a complementary metal-oxide semiconductor (CMOS) process, is generally considered to be inappropriate for communications requiring high linearity, such as code division multiple access (CDMA) communications, due to its relatively poor performance compared to a bipolar junction transistor (BJT). Recently, though, developments enabling gate lengths of MOS transistors to be reduced have resulted in lower prices of CMOS RFICs. Additionally, va...

Claims

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Application Information

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IPC IPC(8): H03G3/10H03F3/68H03F3/04
CPCH03F1/26H03F1/301H03F1/3205H03F3/19H03F2200/18H04B1/123H03F2200/366H03F2200/372H03F2200/451H03F2200/492H03F2200/294
Inventor KANG, BYOUNG-JOONG
Owner SAMSUNG ELECTRONICS CO LTD
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