Non-volatile memory device programming selection transistor and method of programming the same

Abstract

A memory system includes a flash memory device and a memory controller for controlling the flash memory device. The flash memory device includes a cell string and a selection transistor connected in series to the cell string. The cell string includes multiple series-connected memory cells. The selection transistor has the same structure as a memory cell of the series-connected memory cells, and is programmed through channel hot electron injection.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]A claim of priority is made to Korean Patent Application No. 10-2007-0073605, filed on Jul. 23, 2007, the subject matter of which is hereby incorporated by reference.BACKGROUND OF THE INVENTION[0002]The present invention relates to a semiconductor memory device, and more particularly, to a programming selection transistor of a non-volatile memory device, such as a flash memory device, and a method of programming the same.[0003]A semiconductor memory device is a memory device capable of storing data and reading stored data, as needed. A semiconductor memory device is typically either a random access memory (RAM) or a read only memory (ROM). The RAM is a volatile memory device which loses stored data when no power is applied. The ROM is a non-volatile memory device which retains stored data even when there is no power. Examples of RAM include dynamic RAM (DRAM) and static RAM (SRAM). Examples of ROM include programmable ROM (PROM), erasable...

AI Technical Summary

Benefits of technology

[0010]The present invention provides a non-volatile memory device which reduces threshold voltage distri

Problems solved by technology

The typical NAND flash memory device therefore has various limitations due to the selection transistors

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