Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells

Abstract

A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.

Description

REFERENCE TO RELATED APPLICATIONS[0001]This application is related to co-pending U.S. patent application Ser. No. 11 / 860,142 and 11 / 860,183 filed Sep. 24, 2007.[0002]This application is related to co-pending U.S. patent application Ser. No. 11 / 836,402 filed Aug. 8, 2007.[0003]This application is also related to co-pending U.S. patent application Ser. No. 11 / 616,596 filed Dec. 27, 2006.[0004]This application is also related to co-pending U.S. patent application Ser. No. 11 / 445,793 filed Jun. 2, 2006.GOVERNMENT RIGHTS STATEMENT[0005]This invention was made with government support under Contract No. FA9453-06-C-0345 awarded by the U.S. Air Force. The Government has certain rights in the invention.BACKGROUND OF THE INVENTION[0006]1. Field of the Invention[0007]The present invention relates to the field of solar cell semiconductor devices, and particularly to multifunction solar cells including a metamorphic layer. Such devices also include solar cells known as inverted metamorphic solar...

AI Technical Summary

Benefits of technology

[0077]The efficacy of the present invention has been demonstrated in a test solar cell which incorporated an exponential doping profile in the 3 μm thick base layer of the bottom subcell, according to the present invention. Following measurements of the electrical parameters of the test cell, there was observed a 6.7% increase in current collection. The measurements indicated an open circuit voltage (Voc) equal to at least 3.014V, a short circuit current (Jsc) of at least 16.55 mA / cm, and a fill factor (FF) of at least 0.86 at AMO.

Problems solved by technology

While significant progress has been made in this area, the requirement for solar cells to meet the needs of more sophisticated applications has not kept pace with demand.

The structures described in such prior art present a number of practical difficulties relating to the appropriate choice of materials and fabrication steps.

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