Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells

Abstract

A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile.

Description

REFERENCE TO RELATED APPLICATIONS[0001]This application is related to co-pending U.S. patent application Ser. No. 11 / 860,142 and 11 / 860,183 filed Sep. 24, 2007.[0002]This application is related to co-pending U.S. patent application Ser. No. 11 / 836,402 filed Aug. 8, 2007.[0003]This application is also related to co-pending U.S. patent application Ser. No. 11 / 616,596 filed Dec. 27, 2006.[0004]This application is also related to co-pending U.S. patent application Ser. No. 11 / 445,793 filed Jun. 2, 2006.GOVERNMENT RIGHTS STATEMENT[0005]This invention was made with government support under Contract No. FA9453-06-C-0345 awarded by the U.S. Air Force. The Government has certain rights in the invention.BACKGROUND OF THE INVENTION[0006]1. Field of the Invention[0007]The present invention relates to the field of solar cell semiconductor devices, and particularly to multifunction solar cells including a metamorphic layer. Such devices also include solar cells known as inverted metamorphic solar...

AI Technical Summary

Benefits of technology

[0014]The present invention provides a method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell, the method comprising: providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell having a base and an emitter on said substrate having a first band gap; forming a second solar subcell having a base and an emitter over said first solar subcell having a second band gap smaller than said first band gap; forming a grading interlayer over said second subcell, said grading interlayer having a third band gap greater than said second band gap; and forming a third solar subcell having a base and an emitter over said grading interlayer having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell, wherein at least one of the bases has an exponentially doped profile.

Problems solved by technology

While significant progress has been made in this area, the requirement for solar cells to meet the needs of more sophisticated applications has not kept pace with demand.

The structures described in such prior art present a number of practical difficulties relating to the appropriate choice of materials and fabrication steps.

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