Unlock instant, AI-driven research and patent intelligence for your innovation.

Polishing Pad and Method of Producing the Same

Inactive Publication Date: 2011-01-06
SAN FANG CHEM IND
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the reacted surface is continually wiped away causing fresh silicon to be exposed to the slurry and the polishing pad.
Such processes result in an uneven distribution of the fibers, and aggregations of fibers are easily observed in a nonwoven fabric.
In addition, a breakage of the fibers also occurs due to these processes.
Furthermore, after embedding the elastomer into the fabric, the uneven distribution of the elastomer due to the uneven distribution of the fibers affects the cell size made of the fibers and the elastomer, hardness, uniformity, density of the elastomer, and thickness, and the slurry cannot flow smoothly and polishing particles in the slurry cannot diffuse evenly.
Besides, the residues formed during polishing tend to stay on the surface of the polishing pad and their removal is difficult; as a result, the residues scrape and damage the substrate to be polished.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example

[0030]Base Material: A polyethylene terephthalate chip was melt spun at 260° C. to 300° C. and quenched at room temperature. The chip was then subjected to a calender machine to obtain a base material with 10 to 150 meshes and having a thickness of 0.7 mm and a weight of 150 g / m2.

[0031]Fiber mat: A fabric was slivered for to obtain a mat. Several sheets of the net were laid up and then woven with 70 Deniers of Nylon 6 yarn to obtain a 30-mesh sheet having a thickness of 0.15 mm and a weight of 35 g / m2. The sheet was then needle punched (700 times / m2) to obtain a fiber mat with a weight of 475 g / m2.

[0032]Impregnating: The base material was impregnated in an elastomer solution with a viscosity of 700 to 850 Cps. The elastomer solution comprises 50 wt % of polyurethane, 49 wt % of dimethylformamide and 1 wt % of detergent.

[0033]Curing: The base material, after impregnating, was put into a curing solution comprising 25 wt % dimethylformamide in water to mold the elastomer impregnated in...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Login to View More

Abstract

The present invention mainly relates to a polishing pad and method of producing the same. The polishing pad comprises a base material having a surface for polishing a substrate, wherein the surface comprises a non-woven fabric and an elastomer. The elastomer is embedded into the fabric, and the non-woven fabric comprises a plurality of first long fibers randomly entangled with each other.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a polishing pad for use in a chemical mechanical polishing, and a method of producing the polishing pad.[0003]2. Description of the Related Art[0004]Chemical mechanical polishing (CMP) is a procedure for planarizing the surface of a substrate with a polishing pad. CMP is generally applied to polishing lens, mirrors, substrates of liquid crystal displays, silicon wafers, and oxidation and / or metal layers on silicon wafers.[0005]Taking silicon wafers as an example, ingots of monocrystalline silicon are sliced first. The wafers are usually lapped to make them flat for subsequently chemical etching. A polishing process is required after the etching process. During the polishing process, a polishing pad together with slurry reacts chemically with the silicon atoms on the surface of the wafer to make the reacted surface softer than the underlying silicon. Furthermore, the reacted surface is co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24D11/02B24B1/00B24D3/20
CPCB24B37/24B24D3/22B24D11/02D04H3/12B32B5/26B32B5/28D04H3/105B32B5/06B32B5/022B32B5/024B32B5/08B32B5/18B32B5/245B32B2260/021B32B2260/048B32B2262/0246B32B2262/0261B32B2262/0276B32B2262/12B32B2262/14B32B2266/0207B32B2307/50
Inventor FENG, CHUNG-CHIHYAO, I-PENGCHAO, CHEN-HSIANGHUNG, YUNG-CHANG
Owner SAN FANG CHEM IND