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Method and apparatus for infrared detection and display

a technology of infrared detection and display, applied in the direction of optical radiation measurement, sustainable manufacturing/processing, instruments, etc., can solve the problems of thousands of electrons leaving the channel, complex electro-optical devices that require very high operating voltages, and can be expensive, so as to enhance the absorption of photons having wavelengths and the wavelength range of ir detectors can be modified.

Active Publication Date: 2011-02-10
UNIV OF FLORIDA RES FOUNDATION INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution enables night vision devices to operate at low voltages (10-15 V) and reduces manufacturing costs, providing effective infrared detection and visible image display with enhanced wavelength sensitivity.

Problems solved by technology

Conventional night vision goggles are complex electro-optical devices that can require very high operating voltages and cost thousands of dollars.
These new electrons also collide with other atoms, creating a chain reaction that results in thousands of electrons leaving the channel where only a few entered.

Method used

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  • Method and apparatus for infrared detection and display
  • Method and apparatus for infrared detection and display
  • Method and apparatus for infrared detection and display

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Embodiment Construction

[0017]Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. A specific embodiment utilizes organic layers to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. In a specific embodiment, quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots.

[0018]In another embodiment, a photoconductor structure can be used instead of a phototransistor. In one embodiment, the photoconductor can incorporate PbSe or PbS quantum dots. In another embodiment, the photoconductor can incorporate organic materials.

[0019]Specific embodiments also involve displaying a detected IR im...

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PUM

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Abstract

Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a divisional of U.S. application Ser. No. 11 / 865,505, filed Oct. 1, 2007, which claims the benefit of U.S. application Ser. No. 60 / 930,225, filed May 14, 2007, and claims the benefit of U.S. application Ser. No. 60 / 848,581, filed Sep. 29, 2006, all of which are hereby incorporated by reference herein in their entirety, including any figures, tables, or drawings.BACKGROUND OF INVENTION[0002]There are many applications for detecting infrared (IR) radiation. IR can refer to radiation having wavelengths longer than visible light (>0.7 μm) up to about 14 μm, with near-IR being a subset referring to wavelengths from about 0.7 μm to about 1.0 μm. One application is the detection of IR in environments with low ambient light, which can occur, for example, at night. It can also be useful to display to a user the image of the detected IR at a wavelength visible to the user. One common device for detecting IR images and display...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G01J5/26B82Y15/00G01J5/03H10K99/00
CPCH01L27/288H01L27/307H01L51/0053H01L51/0081H01L27/3227H01L51/4213H01L51/428Y02E10/549H01L51/0504Y02E10/52Y02P70/50H10K65/00H10K39/32H10K85/621H10K85/324H10K30/65H01L31/153H10K59/60H10K30/10H10K10/00
Inventor SO, FRANKY
Owner UNIV OF FLORIDA RES FOUNDATION INC