3D polysilicon diode with low contact resistance and method for forming same

a polysilicon diode and low contact resistance technology, applied in the field of data storage technology, can solve the problems of high forward bias current, and inability to withstand high curren
US20110062557A1Active Publication Date: 2011-03-17SANDISK TECH LLC
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Patent Information

Authority / Receiving Office
US · United States
Current Assignee / Owner
SANDISK TECH LLC
Publication Date
2011-03-17

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Abstract

A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R / W material in a 3D memory array.
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Description

BACKGROUND1. FieldThe present invention relates to technology for data storage.2. Description of the Related ArtSemiconductor-based p-i-n diodes are known in the art. These diodes are referred to as p-i-n devices because they include a region that is heavily doped with a p-type conductor (p+ region), an intrinsic region, and a region that is heavily doped with an n-type conductor (n+ region). The intrinsic region is not intentionally doped, but may have a low level of n-type and / or p-type impurities. The p-i-n diode may be formed with materials such as silicon, germanium, silicon germanium, etc. Suitable dopants can be used in the p+ region and the n+ region.Semiconductor-based p-i-n diodes have a variety of uses. One proposed usage is a memory cell. Published U.S. Patent Application 2005 / 0052915 titled, “Nonvolatile Memory Cell without a Dielectric Antifuse having High- and Low-impedance States,” filed on Sep. 29, 2004 describes a p-i-n diode that has at least two resistance states...

Claims

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