Monolithic integration of silicon and group III-V devices

Abstract

Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed.

Description

[0001]The present application claims the benefit of and priority to a pending provisional application entitled “Monolithic Integration of Silicon and Group III-V Devices and Efficient Circuits Utilizing Same,” Ser. No. 61 / 339,190 filed on Mar. 1, 2010. The disclosure in that pending provisional application is hereby incorporated fully by reference into the present application.DEFINITION[0002]In the present application, “group semiconductor” or “group III-V device” or similar terms refers to a compound semiconductor that includes at least one group III element and at least one group V element, such as, but not limited to, gallium nitride (GaN), gallium arsenide (GaAs), indium aluminum gallium nitride (InAlGaN), indium gallium nitride (InGaN) and the like. Analogously, “III-nitride semiconductor” refers to a compound semiconductor that includes nitrogen and at least one group III element, such as, but not limited to, GaN, AlGaN, InN, AlN, InGaN, InAlGaN and the like.BACKGROUND OF THE ...

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Benefits of technology

[0009]The present invention is directed to monolithic integration of silicon and group III-V semiconductor devices, substantial

Problems solved by technology

However, the fabrication of group III-V devices, such as, GaN transistors, is often not compatible with popular and commonly used silicon devices.

The separate dies increase fabrication cost, packaging cost, area consumed on a PC board, and result in increased parasitic inductance, capacitance and resistance due to interconnections required at the packaging level and the PC board level.

Moreover, due to increased assembly cost and complexity, and reduced throughput, the separate dies present severe disadvantages.

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