Organometallic compounds

a technology of organic compounds and precursors, applied in the field of organic compounds, can solve the problems of not having the desired optimal properties of atomic layer deposition precursors for certain applications, unable to meet the requirements of atomic layer deposition, etc., to achieve the effect of improving the properties of the atomic layer, and reducing the number of atomic layers

Inactive Publication Date: 2013-02-28
PRAXAIR TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

These organometallic compounds provide enhanced performance for SiO2 deposition, achieving a balance of reactivity and stability, with yields of 60% or greater, and exhibit improved properties in nanolaminate structures, reducing impurities and optimizing growth rates.

Problems solved by technology

Although many silicon precursors are readily available (e.g., silane, tetrachlorosilane, tetraethoxysilane, tetrakis(dimethylamino)silane), none of these silicon precursors have the desired optimal properties of an atomic layer deposition precursor for certain applications.
Compounds such as silane may be too unstable, tetrachlorosilane may yield halogen impurities, and tetraethoxysilane and tetrakis(dimethylamino)silane may be too unreactive within the temperature parameters of the application.
The problem is therefore to generate a suitable atomic layer deposition precursor for such an application.

Method used

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  • Organometallic compounds

Examples

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examples

Synthesis of Si(N(CH3)2)3(NH2)

[0097]Under an inert atmosphere (nitrogen), 2 molar equivalents of LiNH2 were added to 1 molar equivalent of Si(N(CH3)2)3Cl in tetrahydrofuran solvent. The reaction was stirred at a temperature of 25° C. for a period of 48 hours. Monitoring of the reaction was done by gas chromatography / mass spectrometry in which both Si(N(CH3)2)3Cl and Si(N(CH3)2)3(NH2) parent ions were observed. Once conversion was complete, the solvent was removed, and the product was isolated by distillation as a clear colorless liquid. 1H NMR (300 MHz, C6D6,): 2.52 (s, 18H), 0.25 (br t, 2H, 50 Hz). GC-MS (m / z, %): 176 (100), 132 (100), 116 (33).

Atomic Layer Deposition of SiO2 comparing Si(N(CH3)2)4 and Si(N(CH3)2)3(NH2) Precursors

[0098]The utility of Si(N(CH3)2)3(NH2) was evaluated by comparing performance to the known precursor Si(N(CH3)2)4. An experiment using atomic layer deposition of SiO2 was undertaken, utilizing growth rates as the basis for comparison. The conditions of the...

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Abstract

This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Description

RELATED APPLICATION[0001]This application is a continuation of U.S. patent application Ser. No. 11 / 807,545, filed May 29, 2007, which claims priority to U.S. Provisional Application Ser. No. 60 / 815,834, filed on Jun. 23, 2006, and is incorporated by reference herein in its entirety.FIELD OF THE INVENTION[0002]This invention relates to organometallic compounds represented by the formula HaM(NR1R2)x(NR3H)y(NH2)z wherein M is a metal or metalloid, each of R1, R2 and R3 is the same or different and is independently a hydrocarbon group or a heteroatom-containing group, a is a value from 0 to 3, x is a value from 0 to 3, y is a value from 0 to 4, z is a value from 0 to 4, and a+x+y+z is equal to the oxidation state of M, provided that at least one of y and z is a value of at least 1, a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.BACKGROUND OF THE INVENTION[0003]Chemical vapor deposition methods ar...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): C07F7/02C09D5/00
CPCC07F7/025C23C16/402H01L21/3185H01L21/3141H01L21/318C23C16/45553H01L21/02274H01L21/02205H01L21/02219H01L21/02216H01L21/02118H01L21/02271H01L21/0228H01L21/0215H01L21/02148H01L21/0217
InventorMEIERE, SCOTT HOUSTON
OwnerPRAXAIR TECH INC